SC9913 Recrystallized Silicon Carbide Beam 50 x 50 mm

Recrystallized Silicon Carbide Beam 50 x 50 mm Description

Recrystallized Silicon Carbide Beam 50 x 50 mm is fabricated from SiC with a purity level of at least 99%, ensuring minimal impurities and consistent material properties. The 50 x 50 mm dimension facilitates compatibility with standard ceramic processing equipment. The beam’s ability to withstand temperatures up to 1 650 ℃ is critical for high-temperature applications. Its dense structure (~2.7 g/cm³) contributes to effective thermal performance and mechanical strength in demanding environments.

Recrystallized Silicon Carbide Beam 50 x 50 mm Applications

Industrial Applications
- Used as a structural component in high-temperature furnaces to maintain stability under thermal stress by utilising the high melting point of SiC.
- Applied as a support in heat exchangers to enhance energy transfer efficiency through excellent thermal conduction.

Electronics
- Serves as a substrate in power electronic modules to manage heat dissipation by leveraging the material’s inherent thermal properties.
- Frequently used for sensor housings that require both dimensional stability and resistance to thermal cycling.

Recrystallized Silicon Carbide Beam 50 x 50 mm Packing

The beam is packaged in shock-resistant foam-lined crates with anti-static wrapping to prevent contamination and mechanical damage. Recommended storage is in a controlled, dry environment to avoid moisture uptake. Custom packaging options, including precision compartmentalisation and labeling, are available upon request. Each package undergoes a final inspection before shipment to ensure integrity during transit and storage.

Frequently Asked Questions

Q1: What quality control measures are implemented during production?
A1: Detailed SEM inspections and controlled recrystallisation protocols are employed to monitor grain structure and ensure minimal defects, ensuring that the beam retains its mechanical and thermal properties under operational conditions.

Q2: Can the beam withstand extended high-temperature exposure?
A2: Yes, the beam is engineered to operate up to 1 650 ℃, making it suitable for continuous high-temperature processes. The recrystallised structure enhances thermal stability and minimises thermal degradation.

Q3: What storage conditions are recommended to preserve material integrity?
A3: The beam should be stored in a dry, temperature-controlled environment with anti-static packaging to prevent moisture and particulate contamination, thereby preserving its high-purity characteristics and dimensional accuracy.

Additional Information

Silicon carbide is an advanced ceramic material known for its high melting point and excellent thermal conductivity. Its unique bonding structure gives rise to resistance against thermal shock and chemical corrosion. Researchers utilise techniques such as recrystallisation to refine the microstructure, thereby achieving improved toughness and consistent performance.

This material is increasingly applied in industrial systems where high thermal and mechanical stresses are routine. Understanding the processing techniques and material characteristics of SiC enhances its integration into applications ranging from high-temperature furnaces to heat management in electronic devices.