SC9916 Recrystallized Silicon Carbide Beam 60 x 90 mm

Recrystallized Silicon Carbide Beam 60 x 90 mm Description

Recrystallized Silicon Carbide Beam 60 x 90 mm is manufactured using high-purity SiC that undergoes a precise recrystallisation process. Its dimensions ensure compatibility with industrial fixtures and thermal systems, while the material’s inherent mechanical stability supports usage in high-temperature environments up to 1 650 ℃. The refined microstructure contributes to minimised thermal gradients and enhanced performance in applications demanding durable ceramic components.

Recrystallized Silicon Carbide Beam 60 x 90 mm Applications

1.       Electronics
- • Used as a thermal management element in high-power semiconductor modules to achieve efficient heat dissipation by leveraging controlled recrystallisation.
- • Applied as a structural component in processing equipment to maintain dimensional stability under thermal stress due to its consistent material properties.

2.       Industrial
- • Serves as a furnace lining insert in high-temperature processing systems to improve structural integrity by leveraging its refractory characteristics.
- • Frequently used as a support material in high-stress mechanical assemblies to reduce deformation risks by utilising its inherent density and stability.

Recrystallized Silicon Carbide Beam 60 x 90 mm Packing

The beam is individually sealed in a moisture-resistant, anti-static polyethylene bag and then placed in a corrugated cardboard box with foam padding to reduce mechanical shocks. The packaging is labelled for easy inventory management and is designed to meet cleanroom handling standards. For optimal preservation, store in a cool, dry, and dust-free environment. Customised packaging options are available to address specific handling requirements.

Frequently Asked Questions

Q1: What quality control measures are implemented during production?
A1: Stanford Advanced Materials (SAM) utilises SEM imaging and XRD analysis to monitor grain structure and verify phase composition during recrystallisation. These methods ensure the beam meets stringent industrial tolerances regarding purity and microstructural consistency.

Q2: How does the recrystallisation process affect the product’s thermal performance?
A2: The controlled recrystallisation refines the SiC microstructure, reducing defects and thermal gradients. This enhances the material’s capacity to maintain operational stability and performance at temperatures up to 1 650 ℃.

Q3: What handling procedures are recommended for installing the SiC beam?
A3: It is advised to employ cleanroom practices and cushioned supports during installation. Non-abrasive handling tools and fixtures help prevent surface damage and microcracking, preserving material integrity.

Additional Information

Silicon Carbide (SiC) is renowned for its high thermal conductivity, chemical inertness, and robustness at elevated temperatures. These characteristics make it suitable for components in environments that require materials to retain structural integrity and functionality under thermal stress.

Understanding the recrystallisation behaviour of SiC is critical for optimising its performance. Attention to processing conditions, such as cooling rates and ambient atmospheres, directly influences microstructural evolution and, ultimately, the physical properties of the ceramic. This knowledge aids engineers in selecting appropriate materials for applications demanding consistent performance in high-temperature industrial environments.