SC9917 Recrystallized Silicon Carbide Beam 80 x 80 mm

Recrystallized Silicon Carbide Beam 80 x 80 mm Description

Recrystallized Silicon Carbide Beam 80 x 80 mm is manufactured from high-purity silicon carbide (SiC) to deliver consistent thermal and mechanical properties. The 80 x 80 mm size ensures compatibility with equipment designed for standardised ceramic components. Its determined density of ~2.7 g/cm³ aids in maintaining dimensional stability under thermal cycling. This beam, processed in a controlled environment, supports applications where precise material behaviour is essential.

Recrystallized Silicon Carbide Beam 80 x 80 mm Applications

Industrial Processing
- Used as a structural element in high-temperature furnaces to achieve dimensional stability by leveraging SiC’s thermal resistance.
- Applied as wear-resistant linings in processing equipment to provide consistent performance through inherent hardness.

Electronics
- Serves as a substrate in power modules to facilitate heat management by utilising the material's controlled microstructure and tolerance to thermal cycling.

Recrystallized Silicon Carbide Beam 80 x 80 mm Packing

The beam is secured in a foam-lined, inert atmosphere crate to prevent physical damage and contamination. It is sealed in moisture-resistant packaging to maintain its structural integrity during storage. Protective measures and customised packaging options are available to accommodate specific storage conditions and handling requirements, ensuring the product remains uncompromised until deployment.

Frequently Asked Questions

Q1: What precautions should be taken during machining of the silicon carbide beam?
A1: Machining silicon carbide typically requires diamond tooling and controlled coolant application. Using appropriate techniques minimises microcracking and preserves dimensional integrity during material removal.

Q2: How does the beam’s operating temperature limit influence its integration into high-heat applications?
A2: The operating temperature threshold of ≤1650 ℃ delineates the safe operating range. Engineers must incorporate additional thermal management measures when the application’s environment approaches this limit.

Q3: Is the microstructure consistent across delivered beams?
A3: SAM utilises X-ray diffraction and scanning electron microscopy during production to monitor microstructural uniformity. This ensures the beam consistently meets expected performance parameters in thermal and mechanical applications.

Additional Information

Silicon carbide (SiC) exhibits a wide bandgap and excellent chemical inertness, making it a preferred material in high-temperature and corrosive environments. Its inherent hardness and stability also make it a compelling choice for structural components in industrial settings. Understanding the microstructural behaviour of SiC helps in optimising fabrication processes and improving overall material performance.

Recrystallisation of SiC improves grain alignment and densification, which enhances thermal stability and minimises thermal shock. These characteristics are critical when selecting materials for applications that must withstand rigorous operational conditions while maintaining precise dimensional and mechanical properties.