SC9921 Recrystallized Silicon Carbide Tube OD. 10 mm

Recrystallized Silicon Carbide Tube OD. 10 mm Description

Recrystallized Silicon Carbide Tube OD. 10 mm is produced from SiC with a purity of ≥99% and a density of approximately 2.8 g/cm³. Its tubular form with a 10-mm outer diameter ensures compatibility with equipment that requires precise ceramic tubing components. The material exhibits stable performance under thermal conditions up to 1650 ℃, making it suitable for applications that require high thermal endurance and chemical inertness in severe environments.

Recrystallized Silicon Carbide Tube OD. 10 mm Applications

1.       Industrial Processing
   - Used as a refractory liner in high-temperature furnaces to prevent corrosion of processing chambers by using the tube's thermal stability.
   - Applied as a protective sleeve in thermal treatment systems to sustain prolonged exposure to elevated temperatures, thereby preserving system integrity.

2.       Chemical and Semiconductor Manufacturing
   - Serves as a reaction tube in chemical vapour deposition setups to achieve uniform heating by using SiC's inertness and stability.
   - Frequently used as a support component in semiconductor processing equipment to maintain consistent processing conditions through stable dimensional properties.

Recrystallized Silicon Carbide Tube OD. 10 mm Packing

The tube is packaged in a cushioned, anti-static container to prevent physical damage and minimise particulate contamination. Protective wrapping and moisture-barrier bags are used during transit. Products are stored in temperature-controlled conditions to prevent thermal shock. Options for customised labeling and compartmentalised packing are available upon request for handling and traceability purposes.

Frequently Asked Questions

Q1: How does the high purity of the SiC material affect performance in high-temperature applications?
A1: The ≥99% purity of the SiC minimises impurities that could lead to thermal degradation. This ensures stability and consistent performance when exposed to temperatures up to 1650 ℃, crucial for processes requiring controlled thermal profiles.

Q2: What quality control methods are employed during production?
A2: SAM applies advanced electron microscopy and precision sintering control to ensure uniform microstructure and density. These techniques verify dimensional accuracy and material integrity, reducing the risk of microstructural defects.

Q3: Can the tube's dimensions be customised for specialised equipment?
A3: Yes, customisation of dimensions and packaging options is available to meet specific application requirements. Adjustments may include varying the outer diameter or length to accommodate different processing systems while maintaining material performance.

Additional Information

Silicon Carbide (SiC) is a ceramic material known for its excellent thermal conductivity and chemical inertness. Its properties are critical in applications where materials must endure extreme thermal and chemical environments without significant degradation. The recrystallisation process improves the microstructure, enhancing physical performance in demanding industrial settings.

Research in ceramic materials continues to optimise fabrication techniques such as advanced sintering and crystallographic alignment. These improvements enhance the performance reliability of components like SiC tubes in high-temperature reactors, semiconductor processing, and chemical manufacturing systems.