SC9929 Recrystallized Silicon Carbide Disc Dia. 45 mm

Recrystallized Silicon Carbide Disc Dia. 45 mm Description

Recrystallized Silicon Carbide Disc Dia. 45 mm is fabricated from ≥99% pure SiC and formed into a 45 mm diameter disc. The material's high thermal stability and controlled density (~2.8 g/cm³) facilitate its use in high temperature environments up to 1 650 ℃. The recrystallized microstructure minimises grain-boundary variability, thereby enhancing thermal uniformity and mechanical stiffness. Its form factor supports integration into systems that require precise fitting and consistent material behaviour.

Recrystallized Silicon Carbide Disc Dia. 45 mm Applications

Industrial Temperature Systems
• Use as a structural component in high-temperature furnaces to achieve uniform heat distribution by leveraging the minimal grain-boundary defects.
• Applied as an insulating element in thermal processing equipment to withstand prolonged exposure to elevated temperatures.

Semiconductor Processing
• Used as a substrate in semiconductor manufacturing systems to provide a stable platform due to its high purity and controlled dimensional integrity.
• Serves as a support component in rapid thermal processing units to ensure consistent thermal cycling.

Recrystallized Silicon Carbide Disc Dia. 45 mm Packing

The disc is packaged in high-density, anti-static foam-lined containers enclosed in moisture barrier pouches to mitigate physical shock and contamination. It is stored in a temperature-controlled environment with humidity regulation to preserve its microstructural integrity. Customised packaging options, including compartmentalised inserts and specialised labelling, are available to meet specific transport and storage requirements.

Frequently Asked Questions

Q1: How is the uniformity of the disc’s diameter ensured during production?
A1: SAM employs precision sawing and advanced dimensional measurement techniques to monitor and maintain a consistent 45 mm diameter throughout the production process. These practices reduce variability and ensure compatibility with standardised equipment.

Q2: What methods are used to verify the purity level of ≥99% in the SiC material?
A2: The purity is confirmed using techniques such as X-ray fluorescence (XRF) analysis and inductively coupled plasma mass spectrometry (ICP-MS). These tests provide accurate compositional data, ensuring that the material meets the required purity specifications.

Q3: Can this silicon carbide disc withstand rapid temperature fluctuations?
A3: The recrystallized structure of the disc is engineered to manage thermal stress efficiently. Its high-temperature stability up to 1 650 ℃ makes it suitable for processes involving rapid heating and cooling cycles while maintaining structural integrity.

Additional Information

Silicon Carbide (SiC) is widely recognised in materials science for its exceptional thermal and chemical stability. Its intrinsic properties support applications that require durable performance under severe operating conditions. The recrystallization process further refines the microstructure, reducing internal defects and enhancing the material’s overall performance in high-temperature environments.

Research on SiC continues to broaden its use in advanced industrial applications, including high-speed machining, electronic substrates, and refractory linings. Understanding the interaction between microstructure and thermal behaviour is critical for integrating SiC into equipment that demands both mechanical strength and thermal efficiency.