SC9930 Recrystallized Silicon Carbide Disc Dia. 127 mm

Recrystallized Silicon Carbide Disc Dia. 127 mm Description

The Recrystallized Silicon Carbide Disc features a 127 mm diameter manufactured from >99% pure SiC with a density of approximately 2.7 g/cm³. Its recrystallized microstructure ensures dimensional stability and effective thermal conduction, vital for applications under thermal stress. The controlled composition enhances performance in environments that require maintenance of mechanical integrity and thermal regulation under extended high-temperature exposure.

Recrystallized Silicon Carbide Disc Dia. 127 mm Applications

1.       Industrial Applications
   - Used as a structural component in high-temperature furnaces to achieve uniform heat distribution by leveraging its consistent thermal conduction and dimensional stability.
   - Applied in heat exchange systems within processing plants to maintain operational integrity under continuous thermal cycling by utilising its recrystallized microstructure.

2.       Electronics Applications
   - Used as a substrate in power electronics to achieve efficient heat dissipation by leveraging its high-purity composition and defined microstructure.
   - Frequently used for circuit components that require sustained performance at elevated temperatures, capitalising on its stable physical properties.

3.       Automotive Applications
   - Employed in catalytic converter supports to achieve high resistance to thermal shock by leveraging its uniform density and chemical inertness.
   - Applied in exhaust system components to provide structural integrity under fluctuating temperature regimes by using its dimensional stability.

Recrystallized Silicon Carbide Disc Dia. 127 mm Packing

The disc is individually packed in anti-static, cushioned containers with moisture barrier films to prevent contamination and mechanical impact. It is stored under controlled temperature conditions to avoid thermal stress and ensure integrity. Additional customisation, such as vacuum-sealing or inert gas filling, is available to meet specialised storage requirements for high-temperature applications.

Frequently Asked Questions

Q1: How does the recrystallisation process contribute to the disc’s performance at elevated temperatures?
A1: The controlled recrystallisation process uses thermal profiling and microstructural analysis to reduce defects, ensuring that the disc maintains its integrity and consistent properties under temperatures up to 1650 ℃.

Q2: What methods are employed to verify the dimensional accuracy of the disc?
A2: Dimensional accuracy is verified using calibrated optical instruments and coordinate measuring systems to confirm the 127 mm diameter meets strict engineering tolerances required for precise industrial assemblies.

Q3: Is the disc suitable for applications involving repeated thermal cycling?
A3: Yes, the high-purity composition and uniform density (~2.7 g/cm³) support stable performance under repeated thermal cycling, making it appropriate for systems exposed to fluctuating temperature environments.

Additional Information

Silicon carbide (SiC) is extensively studied for its excellent hardness, chemical inertness, and capacity to operate under high thermal loads. The recrystallisation process refines the material’s grain structure, which is a critical factor in minimising defects and improving overall performance in demanding applications.

In many sectors, the understanding of microstructural properties and thermal behaviour is essential for integrating advanced ceramic materials into high-temperature systems. The controlled processing of SiC, as seen in this disc, contributes to enhanced operational stability and serves as a foundational material in both industrial and electronic thermal management solutions.