SC9946 Reaction Bonded Silicon Carbide Beam 35 x 35 mm

Reaction Bonded Silicon Carbide Beam 35 x 35 mm Description

Reaction Bonded Silicon Carbide Beam 35 x 35 mm is fabricated from SiC using a reaction bonding technique that secures a consistent microstructure and precise dimensional tolerances. The 35 x 35 mm size provides compatibility with standard fixture setups in high-temperature environments. Its reaction bonding process reduces porosity and stabilises its density, which is critical for applications requiring resilience under thermal stress and chemical inertness.

Reaction Bonded Silicon Carbide Beam 35 x 35 mm Applications

Electronics
- Used as a substrate in high-temperature electronic assemblies to achieve dimensional stability by leveraging its controlled microstructure.

Industrial Systems
- Applied as a furnace support component to maintain structural performance under thermal cycling by utilising its consistent density and chemical inertness.

Energy Processing
- Serves as a part of thermal management systems to regulate heat distribution by taking advantage of its high operating temperature tolerance.

Reaction Bonded Silicon Carbide Beam 35 x 35 mm Packing

The beams are individually secured in custom-moulded foam inserts and sealed within high-density polyethylene bags to mitigate mechanical impact and contamination. They are stored in a dry, temperature-controlled environment to prevent moisture ingress and thermal degradation. Anti-contamination measures include the use of dust-free liners, and custom packaging options such as bulk labelling and additional cushioning are available on request.

Frequently Asked Questions

Q1: How does the reaction bonding process affect the microstructure and performance of the silicon carbide beam?
A1: The reaction bonding process fuses SiC particles in a controlled environment, reducing porosity and ensuring stable dimensional properties. This produces a uniform microstructure that performs reliably in thermal applications by limiting micro-scale inconsistencies.

Q2: What considerations are necessary for integrating this silicon carbide beam into high-temperature systems?
A2: It is essential to assess thermal expansion coefficients and interface compatibility. The beam’s tolerance of up to 1 300 °C enables it to function within systems experiencing thermal cycling, provided that appropriate mounting methods are employed to minimise stress concentrations.

Q3: How is the dimensional accuracy of the 35 x 35 mm beam maintained throughout processing?
A3: Dimensional accuracy is ensured using precision machining, strict heat treatment protocols, and regular laser measurement verification. This approach minimises variations and ensures the beam conforms to standard interfacing dimensions.

Additional Information

Silicon carbide ceramics are extensively used in applications that require long-term performance under elevated temperatures and chemically aggressive environments. The reaction bonding process, distinct from traditional sintering, facilitates the fusion of SiC particles through a silicon infiltration mechanism, resulting in a fine-grained microstructure with reduced porosity.

This manufacturing method yields materials that are particularly suited for high-stress applications, where thermal shock resistance and minimal chemical reactivity are critical. Understanding the interplay of reaction bonding parameters with final material properties helps in selecting optimal ceramics for industrial, electronic, and energy-related systems.