SC9949 Reaction Bonded Silicon Carbide Beam 40 x 30 mm

Reaction Bonded Silicon Carbide Beam 40 x 30 mm Description

The Reaction Bonded Silicon Carbide Beam 40 x 30 mm is fabricated from high-purity SiC through a reaction bonding process that provides a uniform microstructure. The fixed dimensions of 40 x 30 mm ensure compatibility with standard industrial systems, while the material's inherent thermal stability supports operation up to 1 300 ℃. This structure minimises defects and maintains mechanical integrity under thermal cycling, making it effective for demanding high-temperature and load-bearing applications in industrial settings.

Reaction Bonded Silicon Carbide Beam 40 x 30 mm Applications

Industrial Processing
- Used as a structural component in furnace liners to achieve durability by leveraging its high thermal stability. This minimises thermal expansion and maintains component integrity under repeated temperature cycles.

Electronics Manufacturing
- Applied as a substrate in high-temperature processing equipment to address contamination issues by leveraging its reaction bonded microstructure. This approach preserves dimensional stability and supports precise processing environments.

Reaction Bonded Silicon Carbide Beam 40 x 30 mm Packing

The beams are individually wrapped in moisture-resistant, anti-static packaging with built-in cushioning to prevent mechanical damage and contamination. They are stored in sealed containers under controlled temperature and humidity conditions to preserve structural integrity. Custom labeling and size-specific protective packaging options are available. Proper storage in a dry environment is recommended to maintain material stability throughout transit and storage.

Frequently Asked Questions

Q1: What advantages does the reaction bonding process offer for this silicon carbide beam?
A1: Reaction bonding produces a uniform SiC microstructure with minimised grain boundary defects, enhancing thermal shock resistance and structural stability at elevated temperatures. This controlled process supports consistent mechanical performance especially in high temperature industrial applications.

Q2: How does the operating temperature limit affect its usage?
A2: The specified operating temperature of up to 1 300 ℃ ensures that the beam maintains its mechanical integrity and dimensional stability in high-temperature applications. This makes it suitable for environments such as furnace systems where prolonged thermal exposure is common.

Q3: Which quality control methods are employed during production?
A3: Production batches are evaluated using advanced microscopic imaging and standardised mechanical tests. These methods assess grain distribution and impurity levels, ensuring that each batch adheres to the set purity and density requirements.

Additional Information

Silicon carbide (SiC) is a ceramic known for its high thermal conductivity and low thermal expansion. Its chemical inertness and mechanical resilience make it suitable for applications that demand stability under thermal stress. The reaction bonding process enhances these properties by creating a tightly controlled microstructure, which is critical when the material is subjected to high temperatures and mechanical loads.

This material is increasingly significant in fields that require performance in harsh environments. Its consistent density and purity contribute to predictable behaviour in thermal and structural applications, making SiC a valuable component in both research and industrial production scenarios.