SC9950 Reaction Bonded Silicon Carbide Beam 40 x 40 mm

Reaction Bonded Silicon Carbide Beam 40 x 40 mm Description

Reaction Bonded Silicon Carbide Beam 40 x 40 mm is fabricated from polycrystalline SiC, offering a minimum purity of 92% and a density of approximately 3.0 g/cm³. The 40 x 40 mm dimensions provide a standardised beam suitable for integration into high-temperature assemblies. Its ability to maintain structural integrity at operating temperatures up to 1300 °C makes it a viable component in applications requiring thermal resistance and dimensional stability in ceramic systems.

Reaction Bonded Silicon Carbide Beam 40 x 40 mm Applications

Industrial Applications
- Used as a structural element in high-temperature furnace assemblies to achieve dimensional stability by leveraging its refractory properties.
- Applied as a load-bearing support in thermal processing equipment to maintain performance under thermal cycling.

Electronics Applications
- Used as a substrate or enclosure component in power electronics systems to achieve effective heat dissipation by utilising its high operating temperature range.

Reaction Bonded Silicon Carbide Beam 40 x 40 mm Packing

The Reaction Bonded Silicon Carbide Beam is secured in a custom-moulded foam insert within a sealed, anti-static polyethylene bag to prevent mechanical shocks and contamination. Each unit is further wrapped in moisture barrier material before packing in a corrugated cardboard box. Storage recommendations include a temperature-controlled, low-humidity environment. Custom packaging options, including labelling and compartmentalised inserts, are available per customer specifications.

Frequently Asked Questions

Q1: How is the dimensional accuracy of the 40 x 40 mm beam maintained during production?
A1: The dimensions are controlled through precision machining and monitored using coordinate measuring machines (CMM). This ensures narrow tolerance limits are met, which is essential for maintaining compatibility with high-temperature assemblies and structural applications.

Q2: What quality control measures are implemented to verify the purity and microstructure of the beam?
A2: Quality control involves both scanning electron microscopy (SEM) and X-ray diffraction analysis to verify the microstructure and ensure the material meets the 92% minimum purity. These techniques help in detecting defects and ensuring uniform material distribution throughout the beam.

Q3: How does the beam perform under cyclic thermal loading up to 1300 °C?
A3: The reaction bonding process and inherent properties of SiC allow the beam to maintain structural stability under repeated thermal cycling up to 1300 °C. Controlled sintering and rigorous testing ensure the component withstands thermal stress while retaining its mechanical properties.

Additional Information

Silicon carbide (SiC) is a refractory ceramic known for its excellent thermal stability, low thermal expansion, and high hardness. It is widely used in applications where high-temperature performance and chemical inertness are critical. The material’s robustness under challenging thermal environments makes it a key component in industries ranging from electronics to industrial processing.

Advancements in reaction bonding and sintering processes have improved the consistency and performance of SiC components. Detailed quality control measures, including microstructural analysis and dimensional verification, ensure these components can be reliably deployed in applications requiring stable performance under thermal and mechanical stress.