SC9951 Reaction Bonded Silicon Carbide Beam 50 x 30 mm

Reaction Bonded Silicon Carbide Beam 50 x 30 mm Description

Reaction Bonded Silicon Carbide Beam 50 x 30 mm is manufactured from silicon carbide using a controlled reaction bonding process. The SiC material provides high thermal resistance and chemical inertness, making it suitable for environments exposed to elevated temperatures. The beam’s dimensions support integration with standard machining systems, while the reaction bonding process minimises internal defects. Advanced sintering controls and inspection techniques ensure that the product consistently meets performance requirements up to 1 300 ℃.

Reaction Bonded Silicon Carbide Beam 50 x 30 mm Applications

Industrial Manufacturing
- Used as structural supports in high-temperature furnaces to maintain dimensional stability by leveraging silicon carbide’s minimal thermal deformation.

Electronics
- Applied as insulating substrates in RF components to reduce signal interference by utilising the high thermal and chemical stability of reaction bonded SiC.

Automotive
- Employed as sensor mounts in engine systems to achieve accurate readings under thermal stress by leveraging silicon carbide’s heat resistance and mechanical integrity.

Reaction Bonded Silicon Carbide Beam 50 x 30 mm Packing

The beam is packaged in foam-lined, anti-static containers accompanied by protective wrapping and sealed poly bags to prevent mechanical shock and contamination. The packaging design is tailored to accommodate the beam’s geometry while ensuring minimal exposure to moisture. Optional customised labeling and additional cushioning measures are available. It is recommended to store the product in a temperature-controlled, low humidity environment to maintain its structural properties.

Frequently Asked Questions

Q1: How does the reaction bonding process influence the microstructure of the silicon carbide beam?
A1: The reaction bonding process promotes thorough intergrain bonding and reduces pore size. Scanning electron microscopy is used to inspect the microstructure, ensuring a uniform SiC matrix that supports predictable performance under high-temperature conditions.

Q2: What precautions are necessary when machining this silicon carbide beam?
A2: Machining should use diamond-coated tools with controlled feed rates to prevent microcracking. Employing coolant fluids during processing helps reduce the risk of thermal shock, ensuring the integrity of the ceramic structure.

Q3: How does the specified density of ~3.0 g/cm³ impact its performance in thermal applications?
A3: A density of ~3.0 g/cm³ indicates a compact silicon carbide structure that aids in consistent thermal conductivity and dimensional stability. This characteristic is crucial for applications exposed to significant thermal cycling and mechanical stress.

Additional Information

Silicon carbide is a ceramic known for its high hardness, chemical inertness, and excellent thermal properties. The strong covalent bonds within SiC create a structurally stable material that performs well under aggressive thermal and mechanical conditions. Reaction bonding further refines these attributes, reducing porosity and enhancing overall structural performance.

In many industrial applications, silicon carbide components are valued for their resistance to thermal shock and wear. The material’s inherent properties, combined with meticulous processing techniques, enable the development of components capable of maintaining dimensional stability and performance in environments subject to high temperatures and mechanical loads.