SC9958 Reaction Bonded Silicon Carbide Beam 70 x 50 mm

Reaction Bonded Silicon Carbide Beam 70 x 50 mm Description

Reaction Bonded Silicon Carbide Beam 70 x 50 mm is fabricated from sintered silicon carbide with a minimum purity of 92%. Its beam form and precise dimensions ensure compatibility with structural assemblies in high-temperature environments. The controlled reaction bonding process minimises microstructural defects, improving mechanical integrity and thermal resistance up to 1300 ℃. This material’s inherent chemical inertness makes it suitable for applications requiring stable thermal management and load support.

Reaction Bonded Silicon Carbide Beam 70 x 50 mm Applications

Industrial Applications
- Used as a structural support in high-temperature furnace assemblies to achieve consistent load distribution by leveraging its dimensional stability and thermal tolerance.
- Applied as wear-resistant components in abrasive processing equipment to limit degradation by utilising SiC’s chemical inertness.

Electronics Applications
- Employed as a substrate holder in semiconductor processing systems to achieve uniform thermal profiles by leveraging its high temperature capability and controlled density.
- Utilised in high-temperature electronic test fixtures to maintain system integrity by taking advantage of its reaction bonded microstructure.

Reaction Bonded Silicon Carbide Beam 70 x 50 mm Packing

Reaction Bonded Silicon Carbide Beam 70 x 50 mm is packaged using foam inserts and anti-static materials within sealed, recyclable containers to prevent mechanical damage and contamination. The packaging controls environmental factors during transit and storage, recommending a dry, room-temperature setting. Custom packaging options, including compartmentalised arrangements and labelling, are available based on order requirements.

Frequently Asked Questions

Q1: How does the reaction bonding process affect the mechanical properties of the beam?
A1: The reaction bonding process refines the SiC microstructure, reducing porosity and enhancing load-bearing capacity. This results in improved thermal resistance and dimensional stability under thermal stress, which is critical for maintaining consistent performance in high-temperature industrial settings.

Q2: What quality control measures are implemented during production?
A2: SAM utilises controlled atmosphere sintering along with SEM-based inspections to monitor grain structure and purity levels. These measures ensure that each beam adheres to strict dimensional tolerances and maintains the specified ≥92% SiC purity and density, reducing the risk of variability in performance.

Q3: Can the dimensions of the beam be customised for specific applications?
A3: Customisation options for dimensions may be available on request. SAM evaluates each inquiry to ensure that any modifications do not affect the reaction bonding process or the beam’s structural integrity, with additional trial runs and verification tests performed for modified orders.

Additional Information

Silicon carbide is renowned in materials science for its ability to withstand high thermal and mechanical stresses. Its chemical inertness and high thermal conductivity make it a focal point in research for high-performance structural components. The reaction bonding method enhances these intrinsic properties by reducing microstructural defects, which is critical in ensuring consistent performance under elevated temperatures.

Advances in sintering and inspection techniques have significantly influenced modern ceramic production. Detailed quality control practices, such as SEM analysis, help to optimise material properties and uniformity. This rigorous approach supports applications where precise material performance and long-term stability are essential in both industrial and electronic environments.