SC9961 Reaction Bonded Silicon Carbide Beam 80 x 40 mm

Reaction Bonded Silicon Carbide Beam 80 x 40 mm Description

Reaction Bonded Silicon Carbide Beam 80 x 40 mm is produced via a reaction bonding process that forms a SiC-based ceramic component with a minimum purity of 92% and a density of approximately 3.0 g/cm³. The fixed dimensions ensure compatibility in designs requiring regulated thermal behaviour. Its material characteristics support applications that involve thermal exposure up to 1300 ℃ and environments demanding steady mechanical properties under high-temperature conditions.

Reaction Bonded Silicon Carbide Beam 80 x 40 mm Applications

1.       Industrial Applications
   - Used as a load-bearing support in furnace liners to manage thermal expansion by leveraging dimensional stability under high heat.
   - Applied as a component in thermal processing equipment to achieve consistent structural performance through controlled material properties.

2.       Electronics and Semiconductor Systems
   - Serves as a substrate in high-temperature sensor housings to prevent material distortion by utilising its predictable thermal behaviour.
   - Frequently used in circuit packaging to maintain geometry and mitigate heat-induced stress by capitalising on its defined composition.

3.       General Research and Development
   - Used as a test specimen in high-temperature material studies to observe changes in microstructure by harnessing the known operating limit.
   - Applied as a calibration standard in thermal analysis equipment to achieve repeatable results by employing its consistent physical characteristics.

Reaction Bonded Silicon Carbide Beam 80 x 40 mm Packing

The beam is packaged individually in anti-static wrapping and secured in foam-lined, moisture barrier containers to prevent physical damage and contamination. Rigid inserts minimise movement during transit, while the package is sealed to reduce exposure to atmospheric moisture. Storage recommendations include a dry, temperature-controlled environment. Custom packaging solutions, including labelled compartments, are available upon request.

Frequently Asked Questions

Q1: How does the reaction bonding process affect the SiC beam's microstructure?
A1: The reaction bonding process facilitates controlled formation of the SiC matrix, reducing porosity and ensuring uniform grain structure. This supports predictable mechanical performance in high-temperature settings and improves consistency in material behaviour.

Q2: What storage conditions are recommended for maintaining the material's properties?
A2: It is advised to store the beam in a dry, temperature-stable environment to limit moisture uptake and thermal fluctuations. Using anti-static, cushioned packaging also minimises the risk of mechanical stress and surface damage during handling.

Q3: In what way does a purity of ≥92% influence the beam's technical performance?
A3: A purity level of 92% or higher lowers the presence of secondary phases that might affect thermal expansion. This results in steadier performance under thermal cycling and contributes to precise material behaviour in demanding applications.

Additional Information

Silicon carbide exhibits a covalently bonded crystal structure that endows the material with a high melting point and notable resistance to thermal degradation. The reaction bonding method offers a cost-effective means to produce SiC components while maintaining a controlled microstructure that influences both thermal conductivity and mechanical stiffness.

The applications of silicon carbide in high-temperature environments make it a subject of interest in many R&D studies. Its chemical inertness and capacity to withstand significant thermal gradients allow engineers to design components that operate under extreme conditions, contributing to advancements in industrial processing, electronics, and materials research.