SC9962 Reaction Bonded Silicon Carbide Beam 80 x 60 mm

Reaction Bonded Silicon Carbide Beam 80 x 60 mm Description

Reaction Bonded Silicon Carbide Beam 80 x 60 mm is fabricated from high-purity SiC using a reaction bonding process that ensures dimensional accuracy and microstructural consistency. With a purity level of ≥92% and a density of ~3.0 g/cm³, the beam maintains structural integrity at temperatures up to 1300 ℃. Its precise 80 x 60 mm dimensions facilitate integration into systems requiring reliable thermal resistance and mechanical stability. The material’s inherent chemical inertness adds value in environments prone to aggressive media.

Reaction Bonded Silicon Carbide Beam 80 x 60 mm Applications

Electronics and Semiconductor Applications
- Used as a support structure in semiconductor processing equipment to achieve thermal stability by utilising the beam’s high-temperature resistance.
- Applied as a component in high-temperature sensors to maintain dimensional accuracy under thermal cycling, ensuring consistent performance.

Industrial and Manufacturing Applications
- Serves as a structural element in furnace assemblies to sustain high thermal loads by utilising its reaction bonded SiC properties.
- Frequently used in heat treatment systems to retain mechanical integrity and dimensional precision, facilitating process stability.

Reaction Bonded Silicon Carbide Beam 80 x 60 mm Packing

The beam is packaged in a cushioned, anti-static container lined with foam to mitigate mechanical shocks and contamination risks during transit. It is stored in a sealed enclosure with temperature control recommendations to preserve material properties. Custom packaging options are available, offering additional protective measures and labelling to suit specific handling requirements.

Frequently Asked Questions

Q1: What is the typical tolerance range for the beam’s dimensions?
A1: The Reaction Bonded Silicon Carbide Beam undergoes rigorous dimensional inspections using calibrated equipment. The production process maintains tight tolerances to ensure the 80 x 60 mm dimensions remain consistently within specified limits.

Q2: How does the reaction bonding process enhance the material’s performance?
A2: The reaction bonding process improves microstructural uniformity and reduces defects. This enhances thermal and mechanical stability, ensuring the beam performs reliably under elevated temperature conditions up to 1300 ℃.

Q3: What storage conditions are recommended for this ceramic beam?
A3: It is advised to store the beam in a clean, temperature-controlled environment. The packaging is designed to prevent moisture ingress and mechanical impact, which helps maintain its structural and thermal properties.

Additional Information

Silicon carbide (SiC) is renowned for its exceptional thermal conductivity and resistance to thermal shock. Reaction bonding involves infiltrating a preform with a reactive gas or liquid, which subsequently forms a strong, interconnected microstructure. This transformation is critical in achieving high-performance components in high-temperature environments.

In advanced industrial applications, understanding the interplay between processing techniques and material properties is essential. Reaction bonded SiC offers a balance between cost-effectiveness and performance, making it a valuable material in systems where both mechanical strength and thermal management are required.