SC9971 Reaction Bonded Silicon Carbide Tube OD. 38.1 mm

Reaction Bonded Silicon Carbide Tube OD. 38.1 mm Description

The Reaction Bonded Silicon Carbide Tube OD. 38.1 mm is manufactured through a controlled reaction bonding process that produces a uniform microstructure essential for high-temperature use. Composed of SiC with a minimum purity of 92% and an approximate density of 3.0 g/cm³, the tube exhibits dimensional consistency and thermal stability. These characteristics make it suitable for industrial setups requiring durable components that maintain performance under elevated temperatures.

Reaction Bonded Silicon Carbide Tube OD. 38.1 mm Applications

Industrial Processing
• Used as a liner in high-temperature reaction chambers to achieve stable thermal management by leveraging its high operating temperature capability.
• Applied as a structural component in thermal processing systems to sustain operating conditions by utilising its controlled density and composition. 

Chemical Processing Equipment
• Serves as a conduit in corrosive environments for chemical processing systems to maintain dimensional stability by leveraging its reaction bonded SiC structure.

Reaction Bonded Silicon Carbide Tube OD. 38.1 mm Packing

The Reaction Bonded Silicon Carbide Tube is secured in a reinforced, shock-resistant container with protective foam inserts. It is sealed in an inert wrapping to prevent surface contamination and damage during transit. Packaging protocols include recommendations for storage in a dry, temperature-controlled environment. Custom packaging options, including additional cushioning and labelling, are available to meet specific storage and transportation requirements.

Frequently Asked Questions

Q1: How does the reaction bonding process enhance the tube’s performance in high-temperature environments?
A1: The reaction bonding process creates a uniform microstructure in the SiC tube that improves thermal stability and minimises microcracks. This controlled process ensures dimensional consistency and material performance under elevated temperatures.

Q2: What quality control measures are employed during the manufacturing of this SiC tube?
A2: Stanford Advanced Materials (SAM) uses scanning electron microscopy (SEM) and compositional analysis during production. These methods verify material purity and structural integrity, ensuring the tube meets the required engineering specifications for high-temperature industrial applications.

Q3: Is customisation available for tube dimensions or material purity?
A3: Yes, customisation can be discussed within the constraints of the reaction bonding process. Adjustments to dimensions and purity levels are possible to meet specific application needs, subject to technical feasibility and batch consistency.

Additional Information

Silicon carbide is a technical ceramic renowned for its ability to withstand high temperatures and corrosive environments. As a material, it combines high hardness with excellent thermal conductivity, making it a viable option in settings where conventional metals or polymers may fail. Reaction bonding techniques further improve its structural consistency, allowing engineers to design components that perform under extreme conditions.

In industrial applications, continuous research in SiC processing and characterisation expands its versatility. Understanding the microstructural attributes and failure mechanisms of silicon carbide aids in optimising manufacturing methods and enhances the predictability of its performance, thereby supporting advanced engineering assemblies in demanding environments.