SC9973 Reaction Bonded Silicon Carbide Tube OD. 45 mm

Reaction Bonded Silicon Carbide Tube OD. 45 mm Description

Reaction Bonded Silicon Carbide Tube OD. 45 mm is manufactured using a reaction bonding technique that forms a ceramic structure from silicon carbide (SiC). The process ensures a consistent microstructure with a density of approximately 3.0 g/cm³ and a purity level of at least 92%. The defined outer diameter of 45 mm supports applications requiring precise dimension control and thermal stability up to 1 300 ℃. The material’s inherent chemical inertness and thermal resilience enhance performance in high-temperature environments.

Reaction Bonded Silicon Carbide Tube OD. 45 mm Applications

1.       Industrial Processing
- Used as a liner in chemical reactors to maintain structural integrity during thermal cycling by leveraging its SiC composition.
- Applied as a component in high-temperature processing systems to achieve stable operation by utilising the material’s resistance to thermal shock.

2.       Semiconductor Manufacturing
- Serves as a transfer tube in furnace systems to ensure controlled temperature distribution by capitalising on its dimensional stability.
- Utilised in deposition chambers to provide a stable environment for substrate processing through its consistent material properties.

3.       Thermal Systems
- Employed as a channel in heat treatment equipment to offer a resistant barrier against oxidation by using its high-temperature capability.
- Used as a protective tube in high-temperature transport systems to safeguard materials during rapid thermal transitions by harnessing its robust ceramic framework.

Reaction Bonded Silicon Carbide Tube OD. 45 mm Packing

The tube is packaged with protective foam inserts and sealed in an anti-static pouch to prevent mechanical damage and contamination. It is stored under controlled temperature and humidity conditions to preserve its structural integrity. Additional custom packaging options, including shock-absorbent materials and moisture barriers, are available to meet specific storage and transport requirements.

Frequently Asked Questions

Q1: What quality control measures are implemented during the manufacturing process?
A1: The production process includes microscopic evaluation and X-ray diffraction to examine grain structure and defect density. These evaluations help verify material consistency and are conducted at multiple stages to ensure that the final product meets the specified purity and density requirements.

Q2: How does the reaction bonding process influence the tube’s thermal performance?
A2: The reaction bonding process forms a continuous SiC matrix, which minimises discontinuities and impurities. This structure enhances thermal stability and ensures performance up to 1 300 ℃, making the tube suitable for high-temperature operational environments.

Q3: What storage precautions are necessary to maintain the tube’s integrity?
A3: The tube should be stored in a sealed container in a controlled environment with stable temperature and low humidity. Using cushioning materials helps prevent mechanical damage, and avoiding contamination is critical to preserving the tube’s surface integrity.

Additional Information

Silicon carbide ceramics are widely recognised in material science for their high-temperature endurance and resistance to chemical attack. The reaction bonding process helps achieve a uniform microstructure that enables these properties without the need for high-pressure sintering. Such attributes make silicon carbide an important material in various industrial sectors, where it is used for components that encounter severe thermal and mechanical stresses.

Advancements in ceramic processing techniques continue to broaden the applicability of SiC-based materials. Thorough understanding of the reaction bonding mechanism is essential for optimising the performance of high-temperature systems, particularly where dimensional precision and material stability are critical.