SC9974 Reaction Bonded Silicon Carbide Tube OD. 50.8 mm

Reaction Bonded Silicon Carbide Tube OD. 50.8 mm Description

Reaction Bonded Silicon Carbide Tube OD. 50.8 mm is manufactured from SiC using a reaction bonding technique to achieve a uniform microstructure and density of approximately 3.0 g/cm³. With a minimum purity of 92%, the tube is dimensionally consistent at an outer diameter of 50.8 mm and can operate at temperatures up to 1300 °C. These technical parameters offer enhanced thermal management and structural integrity in harsh industrial environments.

Reaction Bonded Silicon Carbide Tube OD. 50.8 mm Applications

Industrial Applications
- Used as a liner in high-temperature reactors to achieve corrosion resistance by leveraging its chemical inertness.
- Applied as an insulative barrier in process equipment to minimise thermal losses and maintain stable operation through its thermal stability.

Electronics Applications
- Used as a component in sensor housings to achieve stable performance at elevated temperatures by leveraging its dimensional precision and resistance to thermal shock.

Reaction Bonded Silicon Carbide Tube OD. 50.8 mm Packing

The tube is packaged individually in anti-vibration foam-lined containers to prevent mechanical damage during transit. It is further secured in moisture-resistant wraps and stored under controlled temperature conditions to maintain its structural integrity. Custom packaging options, including static-free pouches and tailored compartmentalisation, are available to minimise contamination and meet specific handling requirements.

Frequently Asked Questions

Q1: What applications are RB-SiC tubes suitable for?
A1:RB-SiC tubes are widely used in high-temperature and corrosive environments, such as:

Furnace and kiln protection tubes;

Thermocouple protection sheaths;

Heat exchangers and burner nozzles;

Semiconductor and photovoltaic processing equipment;

Chemical reactors and process piping;

Wear-resistant linings and flow channels.

Q2: How much silicon carbide does an RB-SiC tube contain?
A2: The SiC content typically ranges from 85–92 wt %, with 8–15 wt % residual free silicon. The free Si improves densification and machinability but slightly reduces oxidation resistance compared to high-purity sintered or recrystallised SiC.

Q3: What is the maximum service temperature of an RB-SiC tube?
A3: In oxidising atmospheres, RB-SiC tubes can be used continuously up to 1350–1450 °C. In inert or vacuum environments, the upper limit may approach 1600 °C, provided that temperature gradients are well-controlled.

Additional Information

Reaction bonding in silicon carbide involves the infiltration of molten silicon into a carbon-based preform, resulting in a ceramic material with improved density and reduced porosity. This process enhances both the thermal conductivity and chemical resistance of the substrate, making it suitable for industrial applications that require high-temperature performance and durability.

Understanding the interactions between thermal expansion, density, and microstructural uniformity is crucial in optimising ceramic components for harsh operational environments. The integration of these materials into industrial systems is supported by detailed characterisation methods that confirm their stability and functionality under demanding conditions.