SC9977 Reaction Bonded Silicon Carbide Tube OD. 76 mm

Reaction Bonded Silicon Carbide Tube OD. 76 mm Description

Reaction Bonded Silicon Carbide Tube OD. 76 mm is fabricated using a reaction bonding process that achieves a stable microstructure with a purity of at least 92% and a density of approximately 2.8 g/cm³. The 76 mm outer diameter facilitates integration into systems with strict dimensional requirements. Its ability to withstand temperatures up to 1300 ℃ makes it suitable for environments subjected to high thermal stress.

Reaction Bonded Silicon Carbide Tube OD. 76 mm Applications

1.       Industrial Processing
- Used as a structural component in chemical reactors to enhance abrasion resistance due to its high purity and reaction bonded structure.
- Applied as an inner liner in high-temperature fluid transport systems to maintain dimensional integrity due to its consistent density and thermal stability.

2.       High Temperature Applications
- Serves as an insulating barrier in industrial furnaces to achieve controlled thermal management due to its ability to sustain temperatures up to 1300 ℃.
- Used as a component in heat exchangers to achieve stable mechanical performance under thermal cycling due to its reaction bonded microstructure.

Reaction Bonded Silicon Carbide Tube OD. 76 mm Packaging

The tube is securely packaged in a padded, rigid container with anti-static supports to minimise impact damage during transit. It is wrapped in moisture-resistant material to prevent contamination and temperature fluctuations. Storage should occur in a dry, controlled environment. Custom labeling, partitioning, and protective options are available to meet specific handling and storage requirements.

Frequently Asked Questions

Q1: How does the reaction bonding process influence the tube's microstructure?
A1: The reaction bonding process yields a fine, uniform microstructure with minimised porosity, which enhances dimensional stability and high-temperature performance under thermal cycling.

Q2: How is the tube’s thermal stability maintained up to 1300 ℃?
A2: The inherent properties of silicon carbide, combined with the reaction bonding technique, ensure that the tube withstands temperatures up to 1300 ℃ without significant degradation, making it suitable for thermal management in demanding environments.

Q3: What storage and handling procedures are recommended for this SiC tube?
A3: The tube should be stored in a dry, temperature-controlled environment away from contaminants. Packaging incorporates moisture-resistant and anti-static measures to maintain its structural properties during transit and storage.

Additional Information

Silicon carbide is recognised for its high hardness, excellent thermal conductivity, and chemical inertness. Its performance in high-temperature and abrasive environments is enhanced by controlled manufacturing processes such as reaction bonding, which reduces internal defects and ensures uniform material characteristics.

Advanced characterisation techniques, including SEM and X-ray diffraction, provide valuable insights into SiC microstructure. This understanding is crucial for optimising the material for industrial components and high-temperature processing equipment, where predictable performance and dimensional consistency are essential.