SC9980 Reaction Bonded Silicon Carbide Burner

Reaction Bonded Silicon Carbide Burner Description

Reaction Bonded Silicon Carbide Burner utilises SiC processed through a reaction bonding method, resulting in a material with controlled microstructure and uniform density (~2.8 g/cm³). Its customised dimensions support integration into various industrial systems. The reaction bonding technique minimises thermal stress and enhances structural stability at temperatures up to 1 300 ℃. This material’s inherent thermal conductivity and high purity (≥92%) make it an effective component in systems requiring precise heat distribution and durability under thermal cycling.

Reaction Bonded Silicon Carbide Burner Applications

1.       Industrial Processing
- Used as a burner element in furnace systems to achieve uniform heating by leveraging the material's stable reaction-bonded microstructure.
- Applied in heat treatment setups to regulate temperature profiles by utilising its inherent thermal conductivity and structural integrity.

2.       Semiconductor Manufacturing
- Serves as a localised heating component in semiconductor fabrication, achieving rapid thermal cycling by capitalising on its precise dimensional control.
- Frequently used in processing equipment to maintain consistent operational temperatures by taking advantage of its high-temperature resistance.

Reaction Bonded Silicon Carbide Burner Packing

The Reaction Bonded Silicon Carbide Burner is packaged in anti-static, moisture-resistant pouches with foam inserts to minimise vibration and contamination. Each unit is sealed in a protective outer container designed to withstand mechanical shock during transit. The packaging includes clear labelling and is designed for storage in a dry, temperature-controlled environment. Custom packing solutions, such as compartmentalised inserts and tailored container sizes, are available upon request.

Frequently Asked Questions

Q1: How does the reaction bonding process improve the thermal durability of the burner?
A1: The reaction bonding method creates a controlled microstructure with minimal porosity variations. This consistency reduces thermal stress and allows for uniform heat distribution, ultimately enhancing the burner’s durability under prolonged high-temperature conditions.

Q2: What quality control methods are employed during manufacturing?
A2: SAM employs techniques such as scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis to monitor grain uniformity and phase composition. These measurements ensure that each unit meets stringent thermal stability and performance standards.

Q3: Is customisation of burner dimensions feasible for specialised furnace designs?
A3: Yes, the fabrication process allows for adjustments in dimensions and shapes. Customised designs can be produced to match specific furnace configurations, maintaining the requisite mechanical and thermal properties for optimal performance.

Additional Information

Reaction bonding is a process where a silicon precursor reacts at high temperatures to form a continuous network of silicon carbide. This technique provides a controlled microstructure critical for applications that demand both high thermal conductivity and mechanical integrity. Understanding the interplay between reaction bonding parameters and material properties is essential in optimising performance for industrial heat management.

Silicon carbide itself is renowned for its high melting point, chemical inertness, and electrical insulation properties. These characteristics make SiC-based components, such as the Reaction Bonded Silicon Carbide Burner, invaluable in environments where consistent temperature control and structural resilience under thermal stress are paramount.