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Stanford Advanced Materials
  • Home
  • Elements
  • Gallium
  • Gallium Compound
  • ST11189 Gallium Sulfide Sputtering Target, Ga2S3 Target

    • ST11189 Gallium Sulfide Sputtering Target, Ga2S3 Target

    Catalogue Number ST11189
    Composition Ga2S3
    Purity ≥99.9%, or customized
    Form Target
    Shape Rectangular, Round
    Dimensions Customized

    Gallium Sulphide Sputtering Target, Ga2S3 Target is a high-purity Ga2S3 compound engineered for physical vapour deposition applications. Manufactured by Stanford Advanced Materials (SAM), the target undergoes controlled composition adjustments and microstructural verification through methods such as X-ray diffraction and energy dispersive spectroscopy. This technical regimen helps maintain stringent quality control, ensuring the target meets the uniformity and performance demands required for semiconductor device fabrication.

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    FAQ

    How does the microstructure of the Gallium Sulfide Sputtering Target influence sputtering deposition processes?

    The target's microstructure affects plasma stability and film uniformity. A controlled grain size distribution minimises particle sputtering and ensures consistent energy transfer, directly impacting film adhesion and uniformity during deposition.

    What processing methods are used to achieve the customised dimensions of the target?

    The target is produced using precision machining and controlled sintering processes. These methods allow tailoring of the target dimensions to integrate with specific sputtering system configurations while maintaining substrate integrity.

    How do the material properties of Ga2S3 impact film adhesion during deposition?

    Ga2S3’s controlled chemical composition and inherent thermal stability provide a uniform target surface, which promotes even plasma distribution and improved film adhesion. This minimises defects and enhances deposition efficiency in various semiconductor processes.

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