ST11196 Molybdenum Disulfide Planar Target, MoS2 Target

Molybdenum Disulfide Planar Target, MoS2 Target Description

Molybdenum Disulfide Planar Target, MoS2 Target is a functional substrate used in sputtering systems for depositing MoS2 thin films. The target's customisable dimensions ensure compatibility with standard semiconductor equipment. Its verified planar surface contributes to uniform film deposition, thereby reducing process variability. SAM employs detailed surface imaging and compositional checks to maintain the quality necessary for advanced research and industrial processes.

Molybdenum Disulfide Planar Target, MoS2 Target Characteristics

*The above product information is based on theoretical data and is for reference only. Actual specifications may vary.

Molybdenum Disulfide Planar Target, MoS2 Target Applications

1.       Electronics
- Used as a sputtering target in the fabrication of thin film transistors to achieve uniform film deposition by leveraging its planar geometry.
- Applied as a deposition source in the creation of 2D semiconductor devices, reducing process variability through its controlled thickness.

2.       Industrial Processing
- Serves as a sputtering source in coating applications to produce protective layers on components, ensuring consistent surface properties.
- Frequently used in the manufacture of catalysts where uniform film properties enhance overall process efficiency.

Molybdenum Disulfide Planar Target, MoS2 Target Packing

The target is packaged in a clean-room certified carrier with anti-static and moisture barrier materials. It is stored in sealed, cushioned containers designed to minimise contamination and mechanical damage. Packaging also includes foam inserts and label customisation options. Storage in a temperature-controlled, low-humidity environment is recommended to maintain the target's surface integrity and performance.

Additional Information

Molybdenum disulphide (MoS₂) is a layered transition metal dichalcogenide known for its lubricating properties and stable chemical structure. Its use in sputtering targets facilitates the formation of thin, uniform films crucial in microelectronics and catalysis. Detailed surface characterisation and precision machining are essential in achieving the desired properties for consistent film growth.

Understanding the material behaviour in vacuum environments and during high-energy deposition processes can lead to improved device performance. The interplay between material purity and target surface planarity is critical in optimising deposition efficiency and minimising process variability in industrial applications.