ST11208 Silicon Planar Target, Si Target

Silicon Planar Target, Si Target Description

Silicon Planar Target, Si Target is manufactured from high-purity silicon and features a meticulously planar surface necessary for consistent film deposition in sputtering processes. Its customised dimensions ensure compatibility with standard semiconductor equipment while the controlled flatness minimises edge effects during sputtering. These characteristics improve deposition uniformity and optimise the performance of silicon-based devices in semiconductor manufacturing.

Silicon Planar Target, Si Target Characteristics

The above product information is based on theoretical data and is for reference only. Actual specifications may vary.

Silicon Planar Target, Si Target Applications

Electronics
- Used as a sputtering target in semiconductor fabrication to achieve uniform silicon film deposition by leveraging its controlled planar finish.
- Applied as a deposition source for gate materials in transistor fabrication to enhance device consistency.

Industrial
- Employed in thin film coating processes for solar cell manufacturing to optimise energy conversion efficiency by ensuring a uniform silicon layer.
- Used as a source in research applications to develop advanced materials with tailored electronic properties, due to its customisable dimensions.

Silicon Planar Target, Si Target Packing

Silicon Planar Target, Si Target is packaged using clean, anti-static materials and securely enclosed in foam-lined, rigid containers to prevent mechanical stress and contamination. The packaging design supports controlled storage conditions including temperature regulation and humidity control. Additional customisation options such as vacuum sealing and compartmentalised containers are available to suit specific storage and transportation requirements.

Additional Information

Silicon remains a crucial material in materials science and semiconductor processing due to its inherent electronic properties and abundance. Sputtering targets derived from silicon are central to the thin film deposition processes used in fabricating integrated circuits and optoelectronic devices. Advances in deposition techniques continue to expand the boundaries of material performance in next-level semiconductor technologies.

Furthermore, understanding the relationship between material purity, surface finish, and sputtering efficiency is essential for process optimisation. Detailed characterisation and quality control significantly impact the reliability of the resulting films, supporting ongoing research and development in various industrial sectors.