ST11210 Silicon Carbide Planar Target, SiC Target

Silicon Carbide Planar Target, SiC Target Description

Silicon Carbide Planar Target, SiC Target is manufactured from silicon carbide (SiC) and designed with a planar structure to support sputtering deposition processes. The customisable dimensions facilitate integration into various sputtering systems. The intrinsic chemical inertness and high melting point of SiC aid in maintaining stable deposition rates and uniform film properties, which is critical in semiconductor and ceramic manufacturing environments.

Silicon Carbide Planar Target, SiC Target Characteristics

*The above product information is based on theoretical data and is for reference only. Actual specifications may vary.

Silicon Carbide Planar Target, SiC Target Applications

Electronics
- Used as a sputtering target in thin film deposition to achieve uniform coating layers by leveraging its chemical inertness and high melting point.
- Applied as a diffusion barrier in semiconductor devices to maintain film integrity during high-temperature processing.

Industrial
- Serves as a source in plasma-enhanced coating systems to improve surface durability by leveraging material stability at elevated temperatures.
- Used in ceramic processing to deposit wear-resistant films by taking advantage of the target's engineered microstructure.

Automotive
- Employed in the fabrication of sensor components to produce protective layers by leveraging silicon carbide's chemical stability.

Silicon Carbide Planar Target, SiC Target Packing

Silicon Carbide Planar Target, SiC Target is packaged in static-dissipative wrapping and secured within a shock-absorbing container. The packaging uses inert materials to prevent contamination and is designed for storage in controlled, dry conditions to avoid moisture and temperature fluctuations. Customised options, including vacuum sealing and specialised containerisation, are available to maintain product integrity during shipping and handling.

Additional Information

Silicon carbide is a ceramic material known for its high thermal conductivity and chemical inertness. These characteristics make it suitable for high-temperature processing and harsh environment applications. Its inherent properties help maintain performance stability in conditions that demand minimal material degradation.

In materials science, precise control over process parameters and material characteristics is essential. The use of silicon carbide in sputtering targets exemplifies the integration of engineered microstructures with functional performance. Such applications drive advancements in semiconductor and ceramic manufacturing by enabling consistent thin film deposition and controlled process outcomes.