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ST11215 Tantalum Carbide Planar Target, TaC Target

Catalogue Number ST11215
Composition TaC
Purity ≥99.9%, or customized
Form Target
Shape Rectangular
Dimensions Customized

Tantalum Carbide Planar Target, TaC Target is fabricated using controlled reactive sintering to produce a uniform microstructure suited for sputtering applications. Stanford Advanced Materials (SAM) employs electron microscopy and X-ray diffraction in its quality control process to verify compositional tolerances and grain structure. This methodology aids in achieving the microstructural consistency necessary for reproducible film deposition.

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FAQ

How does the microstructure of the TaC Target influence its sputtering performance?

The microstructure directly affects the sputter yield and uniformity of film deposition. A well-controlled grain distribution enables stable erosion during sputtering, thereby minimising particulate generation and ensuring predictable thin-film characteristics. For more details, contact us.

What quality control methods are implemented during the fabrication of the TaC Target?

Quality control includes electron microscopy and X-ray diffraction analysis to verify microstructural integrity and compositional tolerance. These assessments assist in identifying variations in grain size and density, ensuring the target meets the rigorous requirements of sputtering processes. For further inquiries, please contact us.

How does the customisable dimension option impact compatibility with sputtering systems?

Customisable dimensions allow the target to be adapted to specific chamber geometries. This flexibility ensures proper alignment with deposition equipment, thereby facilitating even erosion across the target surface during sputtering. For additional technical specifications, contact us.

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