ST11216 Tantalum Silicide Planar Target, TaSi2 Target

Tantalum Silicide Planar Target, TaSi2 Target Description

Tantalum Silicide Planar Target, TaSi2 Target is manufactured from a TaSi2 compound through a controlled planarization process. The target is engineered to exhibit a uniform microstructure with customizable dimensions that support reproducible thin film deposition. This consistency in grain structure and composition plays a crucial role in achieving uniform film thickness and high deposition reproducibility in semiconductor processing and other advanced coating applications.

Tantalum Silicide Planar Target, TaSi2 Target Characteristics

The above product information is based on theoretical data and is for reference only. Actual specifications may vary.

Tantalum Silicide Planar Target, TaSi2 Target Applications

1.       Electronics and Semiconductor
- Utilised as a sputtering source in semiconductor deposition systems to achieve uniform film layers by leveraging its controlled microstructure. This application minimises particulate contamination and improves layer consistency.

2.       Industrial Processing
- Applied as a target in coating systems for enhancing surface durability on industrial components. Its tailored composition and planar grain structure support efficient energy transfer during sputtering, reducing process variability.

3.       Research and Development
- Serves as a sample in advanced thin-film studies to analyse deposition behaviour. Customisable dimensions enable precise optimisation in experimental setups, facilitating detailed material performance assessments.

Tantalum Silicide Planar Target, TaSi2 Target Packing

The target is packaged in a protective antistatic container with foam padding to prevent mechanical damage during transit. It is sealed in moisture barrier bags and secured within a rigid outer box to minimise contamination. Storage in a cool, dry environment is recommended, and customised packaging options—such as vacuum-sealed or climate-controlled containers—are available upon request.

Additional Information

The development of sputtering targets such as Tantalum Silicide Planar Target, TaSi2 Target involves a detailed understanding of material properties and processing techniques. Control over parameters such as grain structure and composition directly influences deposition performance and film uniformity in industrial and research applications.

Materials science principles underpin the production and utilisation of TaSi2 targets. Detailed studies on thermal and electrical properties, as well as microstructural integrity, guide advancements in thin film deposition. This understanding supports the continuous improvement of target fabrication processes, ensuring compatibility with demanding semiconductor and coating applications.