ST11217 Titanium Silicide Planar Target, TiSi2 Target

Titanium Silicide Planar Target, TiSi2 Target Description

Titanium Silicide Planar Target, TiSi2 Target is engineered for sputtering applications in thin film deposition. Its planar configuration promotes even material erosion and consistent film thickness, making it well-suited for integration with standard semiconductor processing equipment. The target's controlled composition reduces particulate generation and enhances adhesion properties of the deposited films, thereby supporting precision material deposition processes.

Titanium Silicide Planar Target, TiSi2 Target Characteristics

*The above product information is based on theoretical data and is for reference only. Actual specifications may vary.

Titanium Silicide Planar Target, TiSi2 Target Applications

1.       Electronics
   - Used as a sputtering source in semiconductor devices to attain uniform thin film deposition by leveraging the target's planar structure.
   - Applied as a contact layer in integrated circuits to achieve consistent electrical characteristics by minimising microstructural variations.

2.       Industrial
   - Employed as a coating material in sensor fabrication to maintain controlled film thickness through uniform sputter erosion.
   - Used as a deposition source in surface treatment processes to ensure reliable film properties under varying plasma conditions.

3.       Optoelectronics
   - Utilised as an electrode material in display components to deliver consistent film conductivity by capitalising on the target's even erosion profile.

Titanium Silicide Planar Target, TiSi2 Target Packing

Titanium Silicide Planar Target, TiSi2 Target is packaged in sealed anti-static pouches positioned within rigid foam containers to safeguard against mechanical shock and contamination. The packaging incorporates moisture barriers to prevent surface oxidation during transit and storage. Custom options including vacuum-sealed and labelled containers are available. It is recommended to store in a clean, dry, temperature-controlled environment.

Additional Information

Titanium silicide is an intermetallic compound widely utilised in semiconductor fabrication due to its low resistivity and compatibility with silicon substrates. Its integration in sputtering targets is based on its ability to form uniform, adherent thin films with controlled composition, thereby enhancing deposition performance in various device manufacturing processes.

Advanced surface characterisation techniques such as scanning electron microscopy and X-ray diffraction are critical for evaluating the material's microstructure. These analytical methods not only validate the product's quality but also contribute to more effective process optimisation in thin film deposition applications.