ST0941 Nickel Antimonide Sputtering Target, NiSb

Nickel Antimonide Sputtering Target Description

The Nickel Antimonide Sputtering Target, NiSb is a specialized material manufactured with a precise composition of NiSb. Designed for high performance in sputtering deposition processes, this target provides consistent results in thin film fabrication. With a melting point of 1102 °C and a density of 8.56 g/cm³, it delivers excellent thermal stability and mechanical integrity. Ideal for use in advanced industrial applications, its customized shapes and high purity (≥99%) make it a reliable choice for critical applications in semiconductor manufacturing, optical coatings, and other surface engineering processes.

Nickel Antimonide Sputtering Target Applications

· Thin Film Deposition: Optimized for creating uniform thin films in semiconductor and display technologies.
· Optical Coatings: Provides excellent performance in the fabrication of reflective and anti-reflective coatings.
· Surface Engineering: Enhances surface properties for applications in wear resistance and corrosion protection.
· Advanced Electronics: Ideal for manufacturing components requiring precise material properties and high conductivity.

Nickel Antimonide Sputtering Target Packing

Our Nickel Antimonide Sputtering Targets are carefully prepared and packaged under controlled conditions to maintain product integrity. Each target is vacuum-sealed and securely packaged, with standard weights available in custom sizes as per customer requirements.

Frequently Asked Questions

Q: What are the main industrial applications of the Nickel Antimonide Sputtering Target?
A: It is primarily used in thin film deposition for semiconductors, optical coatings, and surface engineering in advanced electronics.

Q: What is the composition of this sputtering target?
A: The target is composed of NiSb with a purity level of ≥99%.

Q: Can the shape of the target be customized?
A: Yes, apart from standard discs, custom-made shapes can be produced to meet specific application requirements.

Q: How does the high melting point benefit the sputtering process?
A: The melting point of 1102 °C provides excellent thermal stability, ensuring consistent performance during high-temperature deposition processes.

Q: What type of bond is used in the production of this sputtering target?
A: The target utilizes an Indium bond, which enhances its performance during sputtering deposition.