SC1670 Silicon Carbide Grinding Body, SiC

Catalogue Number	SC1670
Dimensions	Diameter: 1~30mm
Material	SiC Ceramic
Purity	97%~99%
Density	3.05~3.15 g/cm3

Stanford Advanced Materials (SAM) is a supplier and manufacturer of sintered SiC, reaction-bonded SiC and recrystallised SiC grinding products. We supply high-purity silicon carbide grinding balls with diameters from 1 mm to 30 mm. Customised modifications are available upon request.

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	Recrystallised SiC	Sintered SiC	Reaction-bonded SiC
Purity of Silicon Carbide	99.5%	98%	>88%
Max. Operating Temperature (°C)	1650	1550	1300
Bulk Density (g/cm³)	2.7	3.1	>3
Appearance of Porosity	<15%	2.5	0.1
Flexural Strength (MPa)	110	400	380
Compressive Strength (MPa)	>300	2200	2100
Thermal Expansion (10^-6/°C)	4.6 (1200°C)	4.0 (<500°C)	4.4 (<500°C)
Thermal Conductivity (W/m·K)	35~36	110	65
Key Properties	High temperature resistance. High purity.	Fracture toughness.	Chemical resistance.

	Recrystallized SiC	Sintered SiC	Reaction Bonded SiC
Purity of Silicon Carbide	99.5%	98%	>88%
Max. Working Temp. (`C)	1650	1550	1300
Bulk Density (g/cm3)	2.7	3.1	>3
Appearance Porosity	<15%	2.5	0.1
Flexural strength (MPa)	110	400	380
Compressive strength (MPa)	>300	2200	2100
Thermal expansion (10^-6/`C)	4.6 (1200`C)	4.0 (<500`C)	4.4 (<500`C)
Thermal conductivity (W/m.K)	35~36	110	65
Main characteristics	High temp. resistance. High purity	Fracture Toughness	Chemical Resistance

SC1670 Silicon Carbide Grinding Body, SiC

Silicon Carbide Grinding Media Description

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