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NR2172 Gallium Nitride Wafer

Catalogue Number NR2172
Material GaN
Thickness 300-450um
Diameter Ø 2" / Ø 4" /Ø 6"
Electrical Resistance (µOhm-cm) < 0.5 Ω·cm

Stanford Advanced Materials (SAM) manufactures wafers in all available diameters to support varied experimental requirements. To meet a wide range of technical specifications, we process both undoped and doped gallium nitride wafers.

Related products: Gallium arsenide wafer, Sapphire wafer, Silicon carbide wafer, Silicon wafer, Germanium wafer (Ge-Wafer).

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