CY3435 AlN Single Crystal Substrate

AlN Single Crystal Substrate Description

AlN single crystal substrate is a semiconductor material with a wide bandgap and exceptional properties.

The bandgap is 6.2 eV and has a direct bandgap. It is an important material for blue and ultraviolet light emission. It exhibits high thermal conductivity, a high melting point, a high specific resistance, a strong breakdown field, and a low dielectric coefficient. It is an excellent electronic material for high-temperature, high-frequency, and high-power devices; AlN, oriented along the c-axis, shows very good piezoelectricity and high-speed propagation characteristics of acoustic surface waves, making it an excellent piezoelectric material for acoustic surface wave devices.

Considering the outstanding physical properties of the aforementioned AlN materials, AlN crystals serve as ideal substrates for GaN, AlGaN, and AlN epitaxial materials. Compared to sapphire or SiC substrates, AlN and GaN offer better thermal matching and chemical compatibility, resulting in reduced stress between the substrate and the epitaxial layer. When an AlN crystal is used as a GaN epitaxy substrate, defects in the device can be significantly reduced. The density is improved and the performance of the device is enhanced, which presents promising applications in the production of electronic components with high temperature, high frequency, and high power.

AlN Single Crystal Substrate Specifications

AlN Single Crystal Substrate Applications

Widely used in the manufacture of high-temperature, high-frequency, and high-power electronic devices.

AlN Single Crystal Substrate Packaging

Our AlN single crystal substrate is carefully handled during storage and transport to maintain the quality of our product in its original condition.