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Catalogue Number | CY2426 |
Dimensions | 10x10x0.33 mm or customized |
Surface finish | Polished, One sides epi polished on Si face |
Orientation | <0001> +/-0.5 |
Growth Method | MOCVD |
Stanford Advanced Materials (SAM) supplies silicon carbide (SiC) crystal substrates in various dimensions. The sales team replies within 24 hours and provides technical support.
Related products: LiAlO2 crystal substrate, LAST crystal substrate, LiF crystal substrate, NdGaO3 crystal substrate, gallium antimonide single crystal substrate.
Send us an inquiry today to learn more and receive the latest pricing. Thank you!