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CY2426 Silicon Carbide (SiC) Crystal Substrate

Catalogue Number CY2426
Dimensions 10x10x0.33 mm or customized
Surface finish Polished, One sides epi polished on Si face
Orientation <0001> +/-0.5
Growth Method MOCVD

Stanford Advanced Materials (SAM) supplies silicon carbide (SiC) crystal substrates in various dimensions. The sales team replies within 24 hours and provides technical support.

Related products: LiAlO2 crystal substrate, LAST crystal substrate, LiF crystal substrate, NdGaO3 crystal substrate, gallium antimonide single crystal substrate.

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