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CY2536 Silicon-Germanium (Si-Ge) Single-Crystal Substrate

Catalogue Number CY2536
Dimensions 4" diameter x 0.5 mm
Material Si-Ge(2 wt% Ge)
Orientation <100> ±0.5°
Growth Method Crystallization process

Silicon-Germanium (Si-Ge) single crystal substrates are widely used as they meet the technical specifications required by various applications. Stanford Advanced Materials (SAM) has over two decades of experience in the production and distribution of Silicon-Germanium (Si-Ge) single crystal substrates.

Related: LiAlO2 crystal substrate, LSAT crystal substrate, LiF crystal substrate, NdGaO3 crystal substrate.

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