CY2536 Silicon-Germanium (Si-Ge) Single-Crystal Substrate

Catalogue Number	CY2536
Dimensions	4" diameter x 0.5 mm
Material	Si-Ge（2 wt% Ge）
Orientation	<100> ±0.5°
Growth Method	Crystallization process

Silicon-Germanium (Si-Ge) single crystal substrates are widely used as they meet the technical specifications required by various applications. Stanford Advanced Materials (SAM) has over two decades of experience in the production and distribution of Silicon-Germanium (Si-Ge) single crystal substrates.

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Conductivity	P-type/ n-type
Specific Resistivity	7-8 Ohm-cm
Polishing	One side polished
Surface Roughness	< 5A
Packaging	Individual vacuum packaging for each item

Conductivity	P type/ n-type
Resistivity	7-8 ohm-cm
Polish	One side polished
Surface roughness	< 5A
Packing	Independent vacuum packaging for each piece

CY2536 Silicon-Germanium (Si-Ge) Single-Crystal Substrate

Silicon-Germanium (Si-Ge) Single Crystal Substrate Description

Silicon-Germanium (Si-Ge) Single Crystal Substrate Specifications

Silicon-Germanium (Si-Ge) Single Crystal Substrate Applications

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