GA2269 Gallium Phosphide Wafer (GaP)

Catalogue Number	GA2269
Material	GaP
Thickness	400um
Diameter	Ø 2"
Dimensions	2’’ dia x 400um-500um thickness, 5x5x0.3-0.5mm, 10x10x0.45mm,
Surface finish	Polished/ Unpolished/ Single-Side Polished (SSP)/ Double-Side Polished (DSP)

Gallium phosphide wafer (GaP) is a semiconductor material with electrical characteristics that differ from those of other III–V compound materials. Stanford Advanced Materials (SAM) supplies single‐crystal GaP wafers for the electronics and optoelectronics industries. Wafer diameters are available up to 2 inches.

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Crystal structure	Cubic. a = 5.4505 Å
Growth method	CZ (LEC)
Density	4.13 g/cm³
Melting point	1480 °C
Thermal expansion	5.3 x10⁻⁶/°C
Dopant	S‑doped	Undoped
Crystal growth direction	<111> or <100>	<100> or <111>
Type of conductivity	N	N
Carrier concentration	2 ~ 8 x10¹⁷/cm³	4 ~ 6 x10¹⁶/cm³
Resistivity	~ 0.03 Ω·cm	~ 0.3 Ω·cm
EPD	< 3 x10⁵	< 3 x10⁵

Crystal Structure	Cubic. a =5.4505 ?/FONT>
Growth Method	CZ (LEC)
Density	4.13 g/cm³
Melt Point	1480 ^oC
Thermal Expansion	5.3 x10^-6 / ^oC
Dopant	S doped	undoped
Crystal growth axis	<111> or <100>	<100> or <111>
Conducting Type	N	N
Carrier Concentration	2 ~ 8 x10¹⁷ /cm³	4 ~ 6 x10¹⁶ /cm³
Resistivity	~ 0.03 W-cm	~ 0.3 W-cm
EPD	< 3x10⁵	< 3x10⁵

GA2269 Gallium Phosphide Wafer (GaP)

Description of Galliumphosphide Wafers

Specifications of Galliumphosphide Wafers

Applications of Galliumphosphide Wafers

Specification

SDS

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