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IF5687 (Discontinued) 1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP

Discontinued IF5687 (Discontinued) 1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP

Catalogue Number	IF5687
Item Number	OTF-1200X-4-RTP
Operating Temperature	1000℃ continuously
Operating Temperature	≤ 1100℃, ≤1hour

Discontinued

1100C Compact Atmosphere Controlled RTP Furnace is a compact tube furnace designed for rapid thermal processing, equipped with a 4" I.D. quartz processing tube and vacuum flanges. Stanford Advanced Materials (SAM) has extensive experience in the manufacture and supply of high-quality compact tube furnaces.

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1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP Description

The1100C Compact Atmosphere Controlled RTP Furnace is a compact tube furnace designed for rapid thermal processing, equipped with a 4" I.D. quartz processing tube and vacuum flanges. This furnace is specifically designed for the annealing of semiconductor wafers or solar cells up to 3" in diameter and offers precise thermal processing capabilities.

The OTF-1200X-RTP-4 is heated by 8 units of 1-kW halogen lamps and has a maximum heating rate of 50 °C/second. An integrated 50-segment precision temperature controller with an accuracy of +/-1°C allows for precise control of heating, holding, and cooling at various process stages.

1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP Specifications

Features	Double-layer steel enclosure with air cooling maintains the surface temperature of the furnace below 60°C. High-purity alumina fibre insulation for maximum energy savings. Split lid with interlock protection that interrupts power supply when the lid is opened during heating.
Operating Temperature	Max. heating temperature: 1100℃ (< 10 min) 1000℃, (<20 min) 800℃, (<120 min) Continuous operating temperature: ≤600℃
Basic Parameters	Heating element: Thermocouple Type K Cooling water flow rate: 0.5 m3/h Standard flow measurement range: 16-160 ml/min Digital vacuum meter: ^10-4 to 1000 Torr
Power	208-240V AC, 12 KW, 50/60 Hz
Temperature Control	FA-YD808P-AG temperature controller is included. Proportional-Integral-Derivative (PID) control and auto-tune function 50 segments programmed with ramp, cool, and hold steps Built-in over-temperature alarm and thermocouple failure alarm Temperature control accuracy +/- 1 °C Standard DB9 communication port for PC
Quartz Tube & Sample Holder	Quartz tube size: 4.33" O.D x 4.05" I.D x 16.2" length. An AlN sample holder with a 3" diameter for annealing samples up to 3" in diameter is included. (AlN has very high thermal conductivity, ensuring optimal temperature uniformity in the sample region. The sample holder is removable from the flange for using the RTP furnace for other purposes). Optional: 3'' O.D. Thick graphite substrate (an alternative to the AlN plate) Optional: Graphite crucible (87 mm outer diameter x 71 mm inner diameter x 12 mm height with lid) designed for the 3" sample holder (The crucible can also be adapted for an RTE, CSS, or HPCVD furnace with a SiC coated graphite crucible).
Overall Dimensions	Flange (closed position): 1350 L * 330 W * 590 H mm Flange (open): 1350 L * 520 W * 740 H mm Size of the furnace: φ180*190mm
Net Weight	70 kg
Warranty	One-year limited warranty with lifetime support. WARNING: Damage caused by the use of corrosive and acidic gases is not covered under the one-year limited SAM warranty.
Certification	CE certified an NRTL or CSA certification is available at an additional cost.

1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP Applications

Semiconductor Manufacturing: For the production of semiconductor components such as silicon wafers, MEMS (Micro-Electro-Mechanical Systems), and photovoltaic cells. Vertical furnaces are used for processes such as oxidation, diffusion, LPCVD (Low Pressure Chemical Vapor Deposition), and annealing.
Thin Film Deposition: Utilised for depositing thin films onto substrates using techniques such as CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), and ALD (Atomic Layer Deposition). Vertical furnaces provide a controlled environment for precise control of film thickness and composition.
Solar Cell Manufacturing: Applied in the fabrication of solar cells and photovoltaic modules. Vertical furnaces are employed for processes such as diffusion, anti-reflective layer deposition, and metallisation to enhance the efficiency and performance of solar cells.

1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP Packaging

Our 1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP is carefully handled during storage and transport to maintain the quality of our product in its original condition.

Specification

Features	Double-layer steel casing with air cooling keeps furnace surface temperature lower than 60°C. High-purity alumina fiber insulation for maximum energy saving. Split cover with Interlock protection, cut the power if lid open during furnace heating process.
Working Temperature	Max. heating temperature: 1100℃ (< 10 min) 1000℃, (<20 min) 800℃, (<120 min) Continuous operating temperature: ≤600℃
Basic Parameters	Heating element: K Type Thermocouple Circulating water flow rate: 0.5 m3/h Standard flow measurement range: 16-160 ml/min Digital vacuum gauge: 10^-4 to 1000 torr
Power	208-240V AC, 12 KW, 50/60 Hz
Temperature Control	FA-YD808P-AG temperature controller is included. Proportional–integral–derivative control (PID control) and auto-tune function 50 segments programmed with ramping, cooling and dwelling steps Built-in over-temperature alarm and thermocouple failure alarm +/- 1 ºC temperature control accuracy Default DB9 PC communication port
Quartz Tube & Sample Holder	Quart Tube Size: 4.33" O.D x 4.05" I.D x 16.2" Length. One 3" Diameter AlN sample holder for annealing samples up to 3" Dia is included. (AlN has a very high thermal conductivity which provides the best temperature uniformity in the sample area. The sample holder is removable from the flange for using the RTP furnace for other purposes.) Optional: 3'' O.D Thick Graphite Substrate (an alternative to the AIN plate) Optional: Graphite Crucible (87 mm OD x 71 mm ID x 12 mm Height with lid) is designed for 3" sample holder (The crucible can also be modified into an RTE, CSS or HPCVD furnace with a graphite crucible coated with SiC.
Overall Dimension	Flange (when closed): 1350 L * 330 W * 590 H mm Flange (when open): 1350 L * 520 W * 740 H mm Furnace size: φ180*190mm
Net Weight	70 kg
Warranty	One year limited warranty with lifetime support. ATTENTION: Any damages caused by the use of corrosive and acidic gasses are not under the coverage of SAM One Year Limited Warranty.
Certificate	CE Certified NRTL or CSA certification is available at extra cost.

*The product information provided above is based on theoretical data and is intended for reference only. Actual specifications may differ.

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Discontinued IF5687 (Discontinued) 1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP

Discontinued

1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP Description

1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP Specifications

1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP Applications

1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP Packaging

Specification

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