AL10296 Undoped Aluminium Nitride AlN Template on 2 inch Silicon (Si <111> N type) 2 inch x 500 nm

Undoped Aluminium Nitride AlN Template on 2 inch Silicon (Si <111> N type) 2 inch x 500 nm Description

Undoped Aluminium Nitride (AlN) on a 2-inch silicon (Si <111> orientation) substrate features a precise 500 nm film thickness. The substrate supports standard semiconductor device manufacturing, maintaining controlled crystallographic properties and low defect density. Its chemical inertness and thermal conductivity contribute to device stability during high-temperature processing. The defined layer thickness ensures uniformity across the substrate for consistent integration into electronic systems.

Undoped Aluminium Nitride AlN Template on 2 inch Silicon (Si <111> N type) 2 inch x 500 nm Applications

1.       Electronics Applications
- Used as an insulating layer in RF circuits to achieve low parasitic capacitance by leveraging the AlN film’s low dielectric loss.
- Applied as a passivation layer in semiconductor devices to reduce leakage currents by utilising the film’s uniform thickness and controlled crystallography.

2.       Industrial Applications
- Used as a thermal management element in power electronics to dissipate heat by harnessing the high thermal conductivity of the AlN film.
- Employed as a substrate base in MEMS fabrication to ensure dimensional stability by capitalising on the precise film deposition control.

Undoped Aluminium Nitride AlN Template on 2 inch Silicon (Si <111> N type) 2 inch x 500 nm Packing

The substrate is packaged in an antistatic, foam-lined container to provide mechanical protection and contamination control. A sealed plastic pouch guards against moisture and particulate matter. The packaging is designed to maintain a stable temperature environment during storage. Customised packaging options, such as vacuum-sealed units or additional cushioning, are available to suit specific handling and shipping requirements.

Frequently Asked Questions

Q1: How does the 500 nm AlN film affect device performance?
A1: The 500 nm AlN film offers a controlled dielectric layer with low defect density, minimising parasitic effects in high-frequency circuits. This uniform layer supports precise integration in semiconductor manufacturing by ensuring consistent electrical and thermal properties across the substrate.

Q2: What storage conditions are recommended for this substrate?
A2: The substrate should be stored in a temperature-controlled, low-humidity environment to protect the AlN film from moisture and particulate contamination. Using antistatic and cushioned packaging helps prevent mechanical damage and maintains film integrity over time.

Q3: Is the substrate compatible with standard silicon processing equipment?
A3: Yes, the 2-inch silicon base and controlled AlN layer are designed to integrate with routine semiconductor fabrication processes. The well-defined thickness and crystallographic orientation allow for compatibility with established device manufacturing protocols.

Additional Information

Ceramic substrates like those based on aluminium nitride are critical in applications where thermal management and electrical insulation are essential. The intrinsic properties of AlN, including its thermal conductivity and dielectric performance, make it suitable for use in electronic packaging and power device applications.

The integration of an AlN film on silicon provides a balance between the mechanical properties of silicon and the electrical characteristics of AlN. This combination supports advances in semiconductor processing by addressing challenges in heat dissipation and device miniaturisation while maintaining dimensional stability and process compatibility.