AL10299 Undoped Aluminium Nitride AlN Template on 2 inch Silicon 5 mm x 5 mm x 200 nm

Undoped Aluminium Nitride AlN Template on 2 inch Silicon 5 mm x 5 mm x 200 nm Description

Undoped Aluminium Nitride AlN Template on 2 inch Silicon 5 mm x 5 mm x 200 nm consists of an epitaxially grown layer of AlN on a silicon substrate, ensuring a high degree of uniformity in film thickness. The 5 mm by 5 mm size is compatible with standard small-scale semiconductor processing, while the 200 nm film thickness facilitates integration into devices requiring precise insulating and barrier layers. The substrate’s inherent ceramic properties offer chemical inertness and thermal stability.

Undoped Aluminium Nitride AlN Template on 2 inch Silicon 5 mm x 5 mm x 200 nm Applications

Electronics
- Used as an insulating barrier in semiconductor devices to reduce leakage currents by leveraging the chemical inertness of the AlN film.
- Applied as a dielectric interface in RF circuits to maintain signal fidelity with a stable, uniform thin film.

Industrial Processing
- Serves as a substrate in microfabrication processes to prevent contamination during high-temperature operations through its consistent film thickness.
- Employed as a barrier layer in LED manufacturing to mitigate diffusion effects by capitalising on its thermal stability.

Undoped Aluminium Nitride AlN Template on 2 inch Silicon 5 mm x 5 mm x 200 nm Packing

The substrate is packaged in anti-static, sealed polyethylene pouches and placed inside rigid, shock-absorbing cartons. It is stored under temperature-controlled and low-humidity conditions to prevent moisture uptake and particulate contamination. Packaging can be customised with additional humidity control features and compartmentalised inserts to support stringent handling requirements during transport and storage.

Frequently Asked Questions

Q1: What process is used to achieve a uniform AlN film on silicon?
A1: The AlN film is deposited using controlled CVD techniques, monitored by in-line SEM and profilometry to maintain uniform thickness and surface morphology.

Q2: How does the undoped nature of the AlN layer benefit semiconductor applications?
A2: The absence of doping minimises unintended free carriers, ensuring stable dielectric characteristics essential for high-frequency device performance.

Q3: What storage environment is recommended for these substrates?
A3: Substrates should be stored in temperature-controlled, low-humidity conditions within anti-static packaging to prevent moisture-induced degradation and contamination.

Additional Information

Aluminium Nitride is frequently employed in electronic applications where high thermal conductivity and electrical insulation are essential. The integration of an AlN layer on a silicon substrate allows for the combination of ceramic and semiconductor properties, enabling advanced device architectures in microelectronics.

The thin film deposition of AlN on silicon requires rigorous control of process parameters, including temperature, pressure, and precursor flow rates. This ensures that the resulting film maintains a uniform structure and predictable electrical properties, which is critical for repeatability in research and industrial applications.