AL10300 Undoped Aluminium Nitride AlN Template on Sapphire Al2O3 (0001) 10x10 mmx5000 nm

Undoped Aluminium Nitride AlN Template on Sapphire Al2O3 (0001) 10x10 mmx5000 nm Description

Undoped Aluminium Nitride AlN Template on Sapphire Al2O3 (0001) 10x10 mmx5000 nm is a single-crystal ceramic substrate that integrates a thin 5000 nm AlN film on a Sapphire (Al2O3) base with a 10x10 mm size. The defined layer thickness facilitates uniform film deposition, while the undoped nature of AlN minimises impurity interference. This structure provides stable dielectric properties and improved thermal management, addressing challenges in rigorous electronic fabrication processes.

Undoped Aluminium Nitride AlN Template on Sapphire Al2O3 (0001) 10x10 mmx5000 nm Applications

Electronics
- Used as a dielectric layer in RF modules to achieve precise signal isolation by leveraging the material's stable thermal and dielectric properties.
- Applied as a heat spreader in LED assemblies to enhance thermal dissipation by leveraging the composite microstructure.

Semiconductor Manufacturing
- Used as a substrate in epitaxial film growth to achieve uniform deposition by leveraging the smooth sapphire surface and controlled AlN properties.

Undoped Aluminium Nitride AlN Template on Sapphire Al2O3 (0001) 10x10 mmx5000 nm Packing

The substrates are packaged in anti-static, foam-padded containers to reduce mechanical stress and contamination. They are enclosed within rigid boxes to protect against physical impact. The packaging is designed for ambient storage conditions with controlled humidity, ensuring minimal exposure to moisture. Custom packaging options, such as vacuum-sealed or inert gas purged boxes, are available upon request.

Frequently Asked Questions

Q1: What processing challenges may arise when using this substrate in high-temperature environments?
A1: Maintaining substrate flatness during rapid thermal cycling can be challenging. Proper temperature ramping and calibration of processing equipment help to avoid warping or microcracking during deposition.

Q2: How does the 5000 nm film thickness affect subsequent layer deposition?
A2: The uniform 5000 nm thickness ensures even nucleation, providing a consistent platform for further film growth while minimising stress-induced defects during semiconductor fabrication.

Q3: Can standard post-processing techniques be applied without disrupting the AlN/Al2O3 interface?
A3: Yes, techniques such as plasma cleaning and selective etching can be employed. Carefully optimised process parameters are essential to preserve the microstructural integrity at the AlN/Al2O3 interface.

Additional Information

Aluminium nitride substrates are recognised for their thermal conductivity and low dielectric constant, making them suitable for high-temperature and electronic applications. When combined with sapphire, the resultant composite balances good heat dissipation with stable electrical characteristics, critical for semiconductor device manufacturing.

The integration of undoped AlN with Sapphire (Al2O3) leverages the inherent material properties of both compounds. Controlled deposition methods and rigorous verification processes improve film uniformity and surface smoothness, essential for precise device fabrication and thermal management in demanding operational environments.