AL10302 Two Sides Polished Aluminium Nitride Template on Sapphire (0001) 2 inch x 0.5 mm AlN Film 1000 nm

Two Sides Polished Aluminium Nitride Template on Sapphire (0001) 2 inch x 0.5 mm AlN Film 1000nm Description

The dual-side polished aluminium nitride template integrates a 1000nm AlN film on a sapphire Al2O3 (0001) substrate. Its 2-inch by 0.5mm dimensions are optimised for semiconductor and microelectronics applications. AlN enhances thermal conductivity while the sapphire base reduces lattice mismatch. This structure facilitates precise film deposition and minimises stress, making it suitable for high-performance electronic device integration.

Two Sides Polished Aluminium Nitride Template on Sapphire (0001) 2 inch x 0.5 mm AlN Film 1000nm Applications

1.       Electronics
   - Used as a dielectric substrate in RF circuits to minimise signal loss by leveraging its low dielectric constant.
   - Applied as a heat spreader in power modules to maintain thermal stability by leveraging high thermal conductivity.

2.       Industrial
   - Used as a platform for microelectronic sensors to improve signal integrity by leveraging a uniform film surface.
   - Applied as an insulating layer in precision measurement devices to achieve accurate readings by leveraging controlled material properties.

Two Sides Polished Aluminium Nitride Template on Sapphire (0001) 2 inch x 0.5 mm AlN Film 1000nm Packing

The substrate is packaged in anti-static, foam-lined containers and sealed in moisture barrier bags to prevent contamination and mechanical damage. Protective cushioning minimises vibration and shock during transit. Store in a clean, dry, temperature-controlled environment to maintain film integrity. Custom packaging options, including compartmentalised inserts and detailed labeling, are available upon request.

Frequently Asked Questions

Q1: How is the 1000nm film thickness monitored during production?
A1: The film thickness is verified using spectroscopic ellipsometry and profilometry, ensuring consistent deposition rates and uniformity across the substrate surface for semiconductor processing.

Q2: What handling precautions should be taken with this substrate?
A2: Use anti-static handling tools and work in a controlled cleanroom environment to avoid particle contamination. Proper storage in moisture-controlled conditions is recommended to preserve film properties.

Q3: Is customisation of substrate dimensions feasible for specific applications?
A3: Yes, adjustments in diameter, thickness, and film deposition parameters are available. Custom orders are processed following detailed specifications to meet particular semiconductor or microelectronic requirements.

Additional Information

Aluminium Nitride (AlN) is valued in high-temperature electronics and semiconductor fabrication due to its high thermal conductivity and insulating properties. Sapphire (Al2O3) substrates are frequently used for their optical clarity and structurally robust crystalline orientation, facilitating precise film deposition. The integration of these materials promotes enhanced device performance, particularly in applications requiring efficient thermal management and electrical insulation.

Combining AlN with sapphire results in substrates with low lattice mismatch and reduced thermal stress, which is central to advanced electronic packaging and high-frequency circuit applications. Understanding their interaction is essential for optimising performance in microelectronic and optoelectronic systems.