AL10303 One Side Polished Aluminium Nitride Template on Sapphire (0001) 2 inch x 0.5 mm AlN Film 5000 nm

One Side Polished Aluminum Nitride Template on Sapphire (0001) 2 inch x 0.5 mm AlN Film 5000 nm Description

This substrate consists of an aluminium nitride (AlN) film precisely polished on a sapphire (Al2O3) substrate. The 2"x 0.5mm dimensions are maintained with a film thickness of 5000nm, ensuring compatibility with semiconductor processing tools. The polished surface provides improved interface uniformity, which is critical for minimising defects during device fabrication and subsequent integration processes.

One Side Polished Aluminum Nitride Template on Sapphire (0001) 2 inch x 0.5 mm AlN Film 5000 nm Applications

1.       Electronics
   - Used as a dielectric layer in integrated circuits to achieve controlled capacitance by leveraging its uniform surface finish.
   - Applied in RF modules to minimise signal loss by utilising the material’s controlled film thickness.

2.       Semiconductor Processing
   - Serves as a substrate in microelectronic devices to enhance process reproducibility by ensuring a smooth, defect-minimised interface.
   - Frequently used for test structures in advanced packaging to achieve precise film uniformity.

3.       Industrial Sensors
   - Employed as a component in sensor arrays for high-temperature environments by exploiting its chemical inertness and high thermal conductivity.
   - Applied in optical systems to provide a stable platform for calibration and performance consistency.

One Side Polished Aluminum Nitride Template on Sapphire (0001) 2 inch x 0.5 mm AlN Film 5000 nm Packing

The product is packaged in an anti-static tray secured within a foam-lined box to prevent mechanical damage and contamination. Protective films are used on the polished surface. Storage in a clean, temperature-controlled environment is recommended to maintain substrate integrity. Custom packaging is available based on specific handling, labelling, and transport requirements.

Frequently Asked Questions

Q1: What quality control measures are integrated during the production of this template?
A1: SAM utilises optical microscopy and profilometry to assess the uniformity of the polished surface and control the film thickness. These systematic inspections help minimise surface defects and ensure dimensional consistency.

Q2: How does the substrate’s structure benefit semiconductor processing?
A2: The uniform, polished AlN film deposited on sapphire enhances layer adhesion and minimises interfacial defects. This aids process reproducibility and device performance during high-temperature fabrication cycles.

Q3: Can customisation be accommodated in the substrate dimensions or film properties?
A3: Yes, customisation in substrate size and film thickness can be arranged. Detailed discussions on desired material properties and processing parameters are conducted to tailor the substrate for specific semiconductor applications.

Additional Information

Aluminium nitride (AlN) substrates are widely recognised in advanced ceramic technologies due to their high thermal conductivity and excellent electrical insulation properties. The integration of AlN films with sapphire substrates offers a balance between mechanical stability and thermal performance, benefiting various semiconductor device applications.

Understanding the interplay between film uniformity and process compatibility is crucial for optimising device fabrication. Detailed material characterisation, including surface roughness and defect density analysis, is an integral part of ensuring these substrates meet stringent industry standards.