AL10305 One Side Polished Aluminium Nitride Template on Sapphire (0001) 4 inch x 0.5mm AlN Film 5000nm

One Side Polished Aluminium Nitride Template on Sapphire (0001) 4 inch x 0.5mm AlN Film 5000nm Description

This substrate comprises an aluminium nitride film deposited on a sapphire (Al2O3) platform with a single side polish that minimises surface roughness. Its 4-inch diameter and 0.5mm thickness ensure compatibility with standard semiconductor fabrication equipment, while the 5000nm film thickness supports efficient thermal conduction and mechanical integrity. XRD and SEM analyses verify the crystalline structure and surface morphology, providing confidence in its performance for precision applications.

One Side Polished Aluminium Nitride Template on Sapphire (0001) 4 inch x 0.5mm AlN Film 5000nm Applications

1.       Electronics Manufacturing
   - Use as a substrate component in LED devices to achieve improved heat dispersion by leveraging its high thermal conductivity.
   - Applied as a dielectric layer in RF components to optimise signal performance through its smooth polished surface.

2.       Industrial Sensor Technology
   - Serves as a base for high-temperature sensors to achieve stable operation by utilising its ceramic stability.
   - Used as an integral part in power modules to support thermal management through its consistent film structure.

One Side Polished Aluminium Nitride Template on Sapphire (0001) 4 inch x 0.5mm AlN Film 5000nm Packing

The substrate is packaged in an anti-static, foam-lined container with a moisture barrier to prevent mechanical and electrostatic damage. It is stored under controlled temperature and humidity to maintain material integrity. Additional customisation options, including bespoke protective layers and individual labelling, are available to meet specialised handling and logistical requirements for sensitive electronic applications.

Frequently Asked Questions

Q1: How is the surface finish of the substrate ensured?
A1: The substrate undergoes thorough SEM inspection and XRD analysis during production. This ensures minimal surface roughness and confirms the uniform alignment of the AlN film, which is essential for high-performance device integration.

Q2: What processing controls contribute to its thermal performance?
A2: The deposition of the AlN film is carefully controlled to achieve a uniform 5000nm thickness. This layer, together with the sapphire base, provides effective heat dissipation and maintains structural stability under operational stress.

Q3: Can the substrate dimensions be customised for unique applications?
A3: Yes, SAM offers adjustments to substrate dimensions and film thickness based on specific device requirements. This flexibility enables integration with varied semiconductor fabrication processes while maintaining critical thermal and mechanical properties.

Additional Information

Ceramic substrates like aluminium nitride films on sapphire are integral in applications requiring high thermal conductivity and electrical insulation. The combination of AlN and Al2O3 ensures a balance between thermal management and structural integrity, which is crucial for high-density electronic circuits and optoelectronic devices.

Advancements in deposition techniques and surface metrology have enhanced the precision of ceramic substrates. Understanding the interplay between microstructure and thermal properties is key to optimising performance in demanding manufacturing environments, further underscoring the importance of systematic quality control in materials engineering.