AL10308 Aluminium Nitride AlN Ceramic Substrate 2 inches x 2 inches x 0.254 mm

Aluminium Nitride AlN Ceramic Substrate 2 inch x 2 inch x 0.254 mm Description

Aluminium Nitride (AlN) Ceramic Substrate 2 inch x 2 inch x 0.254 mm serves as a planar substrate in electronic and semiconductor manufacturing. The 2-inch by 2-inch dimensions ensure compatibility with standard processing equipment, while the 0.254mm thickness provides a balance between mechanical stability and thermal resistance. Its inherent thermal conductivity and low dielectric loss support effective heat dissipation and insulation in electronic devices. The material’s microstructural properties facilitate dimensional control and surface flatness critical for subsequent processing steps.

Aluminium Nitride AlN Ceramic Substrate 2 inch x 2 inch x 0.254 mm Applications

1.       Electronics
   - Used as a heat spreader in high-power electronic circuits to achieve controlled temperature distribution by leveraging the substrate's high thermal conductivity.
   - Applied as a dielectric substrate in RF circuits to minimise signal interference by exploiting its low dielectric loss property.

2.       Semiconductor Manufacturing
   - Serves as a carrier substrate in semiconductor processing to maintain dimensional stability by utilising its uniform thickness and excellent surface flatness.
   - Frequently used for mounting and assembly in microelectronics to facilitate heat dissipation and circuit integrity through superior thermal management.

3.       Industrial Systems
   - Used as a component in power electronics modules to manage thermal load by capitalising on AlN’s efficient heat conduction properties.
   - Applied as an interface material in sensor assemblies to ensure operational stability by benefiting from its controlled microstructure.

Aluminium Nitride AlN Ceramic Substrate 2 inch x 2 inch x 0.254 mm Packing

Each substrate is individually secured in an anti-static, moisture-resistant container with foam inserts to prevent mechanical damage and contamination. The packaging includes a protective layer to minimise exposure to dust and foreign particles. For long-term storage, the substrates should be maintained in a temperature-controlled, low-humidity environment. Custom packaging configurations, including labelled compartments, are available to meet specific logistics and integration requirements.

Frequently Asked Questions

Q1: What measures does SAM use to control the microstructure of the AlN substrate?
A1: SAM implements X-ray diffraction and scanning electron microscopy to evaluate and control the microstructure, ensuring uniform grain distribution and material integrity in each batch, which is critical for maintaining thermal and dielectric performance.

Q2: How does the 0.254mm thickness benefit semiconductor processing?
A2: The 0.254mm thickness offers a balance between mechanical stability and thermal resistance. This dimension facilitates compatibility with standard assembly equipment while supporting effective heat management during device operation.

Q3: What storage conditions are recommended to preserve substrate performance?
A3: Substrates should be stored in a dry, temperature-controlled environment. Maintaining low humidity and stable temperature levels prevents moisture absorption and minimises thermal stress, thus preserving the substrate’s electrical and mechanical properties.

Additional Information

Aluminium Nitride is widely recognised in materials science for its high thermal conductivity and electrical insulation properties. In the context of electronic packaging and semiconductor devices, managing heat dissipation is crucial to prevent performance degradation. As device architectures become more compact, utilising substrates with optimised thermal and dielectric properties becomes increasingly significant.

SAM’s work in early-stage research and process development provides insights into ceramic substrate performance. This foundational knowledge supports product development and aids in addressing the challenges of scaling and integration in advanced electronic and industrial applications.