AL10309 Undoped Aluminium Nitride AlN Template on Silicon (Si <111> P type) 10 mm x 10 mm x 200 nm

Undoped Aluminium Nitride AlN Template on Silicon (Si <111> P type) 10 mmx10 mm x 200 nm Description

Undoped Aluminium Nitride (AlN) Template on Silicon (Si <111> P type) is produced via a precise deposition process that creates a 200 nm thick AlN film on a 10 mm x 10 mm silicon substrate. This configuration enables controlled electrical insulation and efficient thermal management, essential for semiconductor device integration. The substrate’s uniform crystalline orientation supports process consistency and compatibility with standard microfabrication protocols.

Undoped Aluminium Nitride AlN Template on Silicon (Si <111> P type) 10 mmx10 mm x 200 nm Applications

1.      
Electronics and Semiconductor Applications
   - Used as an insulating layer in integrated circuit fabrication to reduce electrical leakage by leveraging its dielectric properties.
   - Applied as a passivation layer in sensor devices to enhance thermal stability and protect against contamination through its uniform film structure.

2.      
Industrial Applications
   - Utilised as a substrate in power device modules to achieve efficient heat dissipation by capitalising on its inherent thermal conductivity.
   - Serves as a carrier for thin-film processes in microelectronic assembly to ensure process uniformity by providing a stable and smooth surface.

Undoped Aluminium Nitride AlN Template on Silicon (Si <111> P type) 10 mmx10 mm x 200 nm Packing

The substrate is securely packaged in an anti-static, foam-lined container with moisture barrier pouches to reduce contamination and mechanical damage. The packaging design includes robust labelling to clearly indicate product specifications and handling instructions. Store in a temperature-controlled, low-humidity environment to maintain film integrity. Custom packaging options are available to tailor protection for specific transport or storage requirements.

Frequently Asked Questions

Q1: How does the film thickness influence substrate integration in semiconductor processes?
A1: The 200 nm AlN film thickness provides controlled insulation and thermal management, which is essential for reducing electrical leakage and enhancing heat dissipation during semiconductor fabrication. A uniform film also supports consistency across processing steps.

Q2: What quality control methods are applied during the AlN deposition process?
A2: The deposition process incorporates high-resolution SEM imaging and surface metrology to monitor film uniformity and detect defects. These inspections ensure adherence to dimensional tolerances and material consistency throughout production.

Q3: What storage conditions are recommended to maintain the substrate’s performance?
A3: The substrate should be stored in a temperature-controlled, low-humidity environment. Protective packaging minimises exposure to contaminants and mechanical stresses, preserving the substrate’s structural and functional integrity.

Additional Information

Aluminium nitride is a ceramic material known for its exceptional thermal conductivity and electrical insulation properties. As a substrate, its ability to manage heat and provide a stable dielectric layer is critical in semiconductor manufacturing, supporting precise electronic and microelectronic applications.

Understanding the deposition process and the substrate’s microstructure is important for optimising performance in integrated circuits and power electronics. The careful control of film thickness and crystalline orientation enhances compatibility with standard semiconductor processing, contributing to improved device efficiency and reliability.