AL10311 Undoped Aluminium Nitride AlN Template on 2 inch Silicon inch x 200 nm

Undoped Aluminium Nitride AlN Template on 2 inch Silicon inch x 200 nm Description

The material comprises aluminium nitride and silicon, forming a dedicated substrate for semiconductor applications. The 2-inch by 2-inch size ensures compatibility with standard processing equipment. The 200 nm film thickness plays a pivotal role in managing thermal gradients and electrical insulation. The defined AlN/Si interface supports integration into devices requiring controlled dielectric properties and minimised defect density for sensitive electronics.

Undoped Aluminium Nitride AlN Template on 2 inch Silicon inch x 200 nm Applications

1.       Electronics Applications
   - Used as a dielectric layer in semiconductor devices to achieve improved electrical insulation by leveraging the controlled AlN film properties.
   - Applied as a substrate in sensor arrays to attain stable signal levels through well-defined crystalline alignments.

2.       Industrial Applications
   - Used as a base for integrated circuits in high-temperature environments to achieve minimised thermal mismatch by utilising the ceramic material's thermal conductivity.
   - Frequently deployed in microelectronic packaging to reduce leakage currents by capitalising on the sharp interface between AlN and silicon.

Undoped Aluminium Nitride AlN Template on 2 inch Silicon inch x 200 nm Packing

The substrate is packaged in an anti-static, foam-lined container to avoid mechanical stress and contamination. It is sealed under an inert atmosphere within an impermeable pouch, ensuring minimal exposure to moisture or particulates. Storage instructions recommend a controlled, low-humidity environment at room temperature. Custom packaging options, including additional protective inserts and specialised labeling, are available upon request.

Frequently Asked Questions

Q1: What quality control methods are used to monitor the film uniformity?
A1: SAM employs scanning electron microscopy (SEM) and X-ray diffraction (XRD) to assess film uniformity and confirm the crystallographic orientation, reducing defect density and ensuring proper interface development.

Q2: How does the substrate’s AlN/Si interface affect semiconductor device performance?
A2: The well-defined interface minimises electrical leakage and enhances insulation, which is critical for device stability during high-temperature processing and operation.

Q3: What storage practices help maintain the substrate’s properties?
A3: It is advised to keep the substrate in a low humidity, temperature-controlled environment using anti-static packaging to prevent contamination and preserve the integrity of the AlN film.

Additional Information

Aluminium nitride (AlN) is a ceramic material known for its significant thermal conductivity and dielectric characteristics. When combined with silicon, the resulting substrate requires meticulous deposition techniques to ensure that the interface and film uniformity meet semiconductor process standards. Understanding the interactions between AlN and silicon is crucial for optimising material performance.

Advancements in ceramic substrate fabrication have highlighted the importance of controlled deposition and surface characterisation. The interplay between thermal expansion, dielectric properties, and interface quality continues to drive research and development in electronic packaging and sensor integration, ensuring that substrates perform as intended in various high-demand applications.