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ST11172 Aluminium Zinc Indium Silicon Planar Target, AlZnInSi Target

Catalogue Number ST11172
Composition Al, Zn, In, Si
Purity ≥90%
Form Target
Shape Rectangular
Dimensions Customized

Aluminium Zinc Indium Silicon Planar Target, AlZnInSi Target is produced using a controlled alloying process that ensures a consistent multi-element composition for sputtering applications. Stanford Advanced Materials (SAM) employs systematic elemental analysis and surface morphology inspection using electron microscopy to verify composition uniformity. This product is manufactured with stringent process controls to maintain precise alloy ratios, meeting the exacting requirements of advanced thin film deposition systems.

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FAQ

What sputtering system parameters should be considered when using the AlZnInSi Target?

The target requires adjustment of power density and operating pressure to optimise the deposition rate. Operators should calibrate their sputtering systems to match the target's customised dimensions, ensuring uniform film growth and controlled elemental distribution.

How does the multi-element composition affect deposition uniformity?

The integrated alloy elements allow a balanced sputtering yield across the target surface. This composition minimises localized variations during film deposition, ensuring consistent layer thickness and composition, which is essential for semiconductor device fabrication.

Are there specific cleaning protocols recommended for maintaining the target surface?

Regular cleaning using non-abrasive solvents and strict particulate control is advised. Proper handling minimises surface contamination and preserves the target's planar integrity, thereby sustaining performance in high-precision sputtering applications.

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