SC2276 SOI-Wafer

Catalogue Number	SC2276
Material	Si
Diameter	2'' to 12''
Dopant	Boron/Phosphorous/Antimony/Arsenic
Conductivity	P-type/N-type / Intrinsic

SAM offers thermal silicon dioxide wafers with diameters ranging from 2" to 12". We select silicon wafers inspected for defects as substrates for the growth of a uniform thermal oxide layer. This approach fulfils your requirements.

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Method	Fusion bonding
Diameter	2'' to 12''
Component thickness	2 µm to 300 µm
Tolerance	±0.5 µm to 2 µm
Orientation	<100> / <111> / <110> or other
Conductivity	P-type / N-type / Intrinsic
Dopant	Boron / Phosphorus / Antimony / Arsenic
Resistivity	0.001 to 100 000 Ohm-cm
Oxide thickness	500 Å to 4 µm
Tolerance	±5%
Handle wafer	≥ 300 µm
Surface	Double-sided polished
Coating	Oxide and nitride can be provided on both sides of the SOI wafer

Method	Fusion bonding
Diameter	2'' to 12''
Device thickness	2 um ~ 300 um
Tolerance	+/- 0.5 um ~ 2 um
Orientation	<100> / <111> / <110> or others
Conductivity	P-type / N-type / Intrinsic
Dopant	Boron / Phosphorous / Antimony / Arsenic
Resistivity	0.001 ~ 100000 ohm-cm
Oxide thickness	500A ~ 4 um
Tolerance	+/- 5%
Handle wafer	>= 300 um
Surface	Double sides polished
Coating	Oxide and nitride can be supplied on both sides of SOI wafer

SC2276 SOI-Wafer

Description of SOI Wafers

Specifications of SOI Wafers

Applications of SOI Wafers

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