Description of Indium Antimonide Wafers
Indium Antimonide (InSb) is a crystalline compound composed of the elements Indium (In) and Antimony (Sb). It is a semiconductor material with a narrow band-gap from the III-V group. It is utilised in infrared detectors, for example in thermal imaging cameras, FLIR systems, infrared missile guidance systems and in infrared astronomy. The Indium Antimonide detectors are sensitive over the wavelength range of 1–5 µm. Historically, Indium Antimonide was employed in thermographic systems that used a single mechanically scanned detector. It is also used as a terahertz radiation source, given that it exhibits strong photo-Dember emission.
Specifications of Indium Antimonide Wafers
Growth
|
LEC
|
Diameter
|
Ø 2" / Ø 3"
|
Thickness
|
500 µm - 625 µm
|
Orientation
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(100) ± 0.5°
|
Deviation
|
2° to 10°
|
Surface
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One side polished or both sides polished
|
Wafer Flat Options
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EJ or SEMI. Std.
|
Mobility
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3.5E5 - 5.0E5 cm²/Vs
|
EPD
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≤ 200 cm-2
|
Grade
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Epi-polished quality / Mechanical quality
|
Packaging
|
Container for individual wafers
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Applications of Indium Antimonide Wafers
- Photovoltaic solar systems
- Integrated circuits
- Transistor