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IN2271 Indium Arsenide Wafer

Catalogue Number IN2271
Material InAs
Thickness 500 um- 625 um
Diameter Ø 2" Ø 3"

Stanford Advanced Materials (SAM) supplies single-crystal InAs wafers (indium arsenide) for the electronics and optoelectronics industries with a diameter up to 3 inches.

Related products: gallium nitride wafer, sapphire wafer, silicon carbide wafer, silicon wafer, gallium arsenide wafer, Germanium wafer (Ge-Wafer).

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